Hawraa M. Abdul-Redaa, Khawla S. Khashan, Aseel A. Hadi, Raid A. Ismail
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引用次数: 0
Abstract
In this study, we used a one-step laser ablation method to combine In2O3 colloidal nanoparticles with multi-walled carbon nanotubes (MWCNTs) to create an In2O3 NPs-MWCNTs heterostructure for photodetectors. X-Ray Diffraction (XRD) analysis of the prepared samples revealed that the In2O3 NPs/MWCNTs nanostructure contained graphite peak at the (002) plane and In2O3 NPs crystalline peaks which are indexed to body-centred cubic phase. Transmission electron microscope (TEM) investigation revealed that In2O3 nanoparticles have a spherical shape nanoparticle with an average size of 20 nm, and 33 nm for In2O3 NPs -MWCNTs nanostructure. UV–Vis test showed that the optical energy gap of the In2O3 NPs decreased from 3.2 to 2.7 eV after incorporating CNTs. The I–V characteristics for the In2O3 NPs/Si and In2O3 NPs-decorated MWCNTs/Si photodetector were investigated under both dark and illumination cases. The responsivity of the In2O3 NPs/Si photodetector showed an increase from 0.43 to 1.15 A/W after introducing CNTs at a wavelength of 450 nm. The fabricated photodetector showed a high sensitivity for Vis–NIR detection. The limit detection of In2O3 NPs -MWCNTs/Si photodetector was determined to be 3.39 × 1011 Jones at 450 nm.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.