Longbin Liu, Wenkai Gao, Zeyu Kang, Chuying Xi, Shang Gao, Yu Tang, Yongyan Li, Fengling Du, Yunlong Yue, Junfeng Kang
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引用次数: 0
Abstract
In this paper, alkali-free boroaluminosilicate glasses with low thermal expansion coefficient and low dielectric loss were prepared. The effect of Bi2O3 substitution for CaO on structure, thermal expansion, elastic modulus, and dielectric properties of the samples was investigated by Fourier transform infrared (FTIR), differential scanning calorimetry (DSC), thermal dilatometer, ultrasonic thickness gauge, and impedance analyzer. The results show that the polymerization degree of the glass network structure increases first and then decreases, which reaches the highest with the substitution of 0.5 mol% Bi2O3 for CaO. The thermal expansion coefficient and dielectric constant decrease and then increase, while elastic modulus shows the opposite trend, which is attributed to the change in the glass network structure. The atomic mass of Bi much greater than that of Ca causes the obvious increase of glass density. The ionic radius of Bi3+ ions is larger than that of Ca2+ ions, making it more difficult to migrate through the glass network, reducing dielectric loss. In particular, the sample with 0.5 mol% Bi2O3 substitution shows excellent properties, such as low thermal expansion coefficient (3.07 × 10–6/K), high elastic modulus (80.58 GPa), low dielectric constant (5.52), and dielectric loss (3.15 × 10–3), which is very suitable for use as chip packaging material.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.