Optical and dielectric properties of TiO2/WO3/Co3O4/polyvinyl alcohol (PVA) composites for optoelectronic utilizations

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-18 DOI:10.1007/s10854-025-14216-0

Fwzah H. Alshammari

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引用次数: 0

Abstract

Polymeric composites based on PVA doped with TiO₂, WO₃, and Co₃O₄ are the subject of the study. A range of physicochemical techniques was used to examine the structure of PVA-based composites. A changing absorption edge for PVA is also seen in the optical studies; it begins at 3.8 eV and drops to 2.4 eV for the PVA-TiO₂-WO₃ combination. Furthermore, the indirect band gap for all composites doped with TiO₂, WO₃, and Co₃O₄ lowers, reaching 2.8 eV in the PVA-TiO₂-WO₃ composite. Pure PVA has the greatest value (5.7 eV). The refractive index, on the other hand, shows 1.67 in PVA and 2.08 in PVA-TiO₂-WO₃ composite. Additionally, the dielectric constant decreased from roughly 28 for PVA and PVA-TiO₂-WO₃- Co₃O₄ composite to less than 20 in PVA-TiO₂-WO₃, but increased to ~ 45 in PVA-TiO₂ composite. PVA composites exhibited distinct behavior consistent with previous research, according to optical and dielectric measurements. As a result, the studied NCs offer a potentially helpful composition for optoelectronic applications.

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光电用TiO2/WO3/Co3O4/聚乙烯醇（PVA）复合材料的光学和介电性能

以PVA为基础，掺杂TiO2、WO3和Co3O4的聚合物复合材料为研究对象。采用了一系列的物理化学技术来研究聚乙烯醇基复合材料的结构。在光学研究中也可以看到PVA的吸收边的变化；对于PVA-TiO2-WO3组合，它从3.8 eV开始下降到2.4 eV。此外，所有掺杂TiO2、WO3和Co3O4的复合材料的间接带隙都降低了，PVA-TiO2-WO3复合材料的间接带隙达到2.8 eV。纯PVA值最大（5.7 eV）。而PVA的折射率为1.67，PVA- tio2 - wo3的折射率为2.08。此外，介电常数从PVA和PVA- tio2 - wo3 - Co3O4复合材料的约28下降到PVA- tio2 - wo3的小于20，而PVA- tio2复合材料的介电常数则上升到~ 45。根据光学和介电测量，PVA复合材料表现出与先前研究一致的独特行为。因此，研究的nc为光电应用提供了潜在的有用组合物。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.