Synthesis, crystal growth, spectral, optical, mechanical, sensor and thermal characterizations of 2-amino-5-chloropyridinium-p-toluenesulphonate crystals

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R. Jamuna, T. Jayanalina, Ehab El Sayed Massoud, K. SenthilKannan
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引用次数: 0

Abstract

The 2-amino-5-chloropyridinium-p-toluenesulphonate (2A5CPPTS) is grown by slow evaporation solution growth method at room ambience. The grown crystal is recrystallized to get the pure 2A5CPPTS compound. The lattice parameters of 2A5CPPTS are a = 8.6563 Å, b = 12.9008 Å, and c = 12.1712 Å and the crystal is of the type of monoclinic nature with space group is P21/n. The structure of the 2A5CPPTS organic crystal is identified by the proton and carbon NMR studies and TEM with 50 nm. The 2A5CPPTS crystal ORTEP plotting with a 50% chance of the thermal displacement ellipsoids. The functional group of 2A5CPPTS is confirmed by the FTIR spectral analysis. The optical transmittance of 2A5CPPTS crystal is the 50% of transparency with 2 mm thickness, and the cut-off is at 214 nm in Tauc’s plot, and the optical bandgap value is 5.12 eV. The 2A5CPPTS crystalline thermal studies are analyzed thermogravimetrically along with different thermal studies. The dielectric analysis of the 2A5CPPTS crystal is dielectric loss and dielectric constant. The dielectric constant is lower at the higher frequency values, and the higher dielectric constant at lower frequency values. The dielectric value of the crystal decreases with increasing frequency and the field of micro-electronics, the crystal can also be used as a form of protection. The micro-hardness of the crystalline material is greater along when the load value also greater. According to Onitsch, the hardness coefficient data indicates that a softer type of material has a hardness coefficient of more than 1.6 and present case it is 5.1. The method’s decision depends on how effective the chemical etchant in identifying dislocation or non-dislocation zones. At the dislocated locations, the etch pattern forms when the surface is appropriately etched. The sensor work is measured for room temperature based LED work and its sensitivity is compared for normal and pressure-based work with % value and with humidity data for 2A5CPPTS crystal. Also, the powder XRD data with Laue’s pattern is provided for better understanding.

2-氨基-5-氯吡啶-对甲苯磺酸盐晶体的合成、晶体生长、光谱、光学、机械、传感器和热表征
采用慢蒸发溶液生长法在室温环境下生长2-氨基-5-氯吡啶-对甲苯磺酸盐(2A5CPPTS)。将生长的晶体再结晶得到纯净的2A5CPPTS化合物。2A5CPPTS的晶格参数为a = 8.6563 Å, b = 12.9008 Å, c = 12.1712 Å,晶体为单斜晶型,空间群为P21/n。通过质子核磁共振、碳核磁共振和50 nm透射电镜对2A5CPPTS有机晶体的结构进行了表征。2A5CPPTS晶体ORTEP绘制具有50%机会的热位移椭球。FTIR光谱分析证实了2A5CPPTS的官能团。2A5CPPTS晶体的透光率为50%,厚度为2mm,在Tauc图中截止点为214 nm,光学带隙值为5.12 eV。用热重法分析了2A5CPPTS晶体的热研究以及不同的热研究。2A5CPPTS晶体的介电特性分析为介电损耗和介电常数。在较高的频率值处介电常数较低,在较低的频率值处介电常数较高。晶体的介电值随频率和微电子领域的增加而减小,晶体也可用作一种保护形式。随着载荷值的增大,结晶材料的显微硬度也随之增大。根据Onitsch的说法,硬度系数数据表明,一种较软的材料的硬度系数大于1.6,目前的情况是5.1。该方法的决定取决于化学蚀刻剂识别位错或非位错区的有效性。在位错位置,当表面被适当地蚀刻时,形成蚀刻图案。测量了基于室温的LED工作的传感器工作,并将其灵敏度与2A5CPPTS晶体的%值和湿度数据进行了正常和基于压力的工作的比较。此外,还提供了具有Laue图的粉末XRD数据,以便更好地理解。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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