Computation of electron interaction with halide precursors

Abstract

The understanding of electron interaction with molecular targets in deposition techniques such as plasma-enhanced chemical vapor deposition (PA-CVD) and focused electron beam-induced deposition (FEBID) is important for advancement in these fields. So, in this research work, we have computed the integral scattering cross section due to electron collision for a few important molecular targets such as ${\mathrm{TiCl}}_4$, ${\mathrm{SnCl}}_4$, ${\mathrm{SnCl}}_2$ and ${\mathrm{SiH}}_2{\mathrm{Cl}}_2$, which are used in these techniques as halide precursors for deposition. We have employed spherical complex optical potential (SCOP) and complex scattering potential-ionization contribution (CSP-ic) formalisms to calculate integral elastic, total, momentum transfer, and ionization cross sections in the energy range from ionization energy up to 5 $\mathrm{keV}$. We have also compared the computed results with the available data in the literature. Based on our information, this is the first effort to theoretically work out cross-sectional data for ${\mathrm{SnCl}}_2$ and ${\mathrm{SiH}}_2{\mathrm{Cl}}_2$ precursor molecules.