{"title":"Immediate ultrasmall current-tunable anomalous Hall effect","authors":"Li Yang, Hao Wu, Fei Guo, Gaojie Zhang, Wenfeng Zhang, Haixin Chang","doi":"10.1016/j.matt.2024.101940","DOIUrl":null,"url":null,"abstract":"Electrical control of the anomalous Hall effect (AHE) provides an important gateway to reveal and regulate topological properties of spins. However, direct, immediate electrical tuning of the AHE in materials has been elusive, unfeasible, and rarely reported. Here, we demonstrate direct, immediate, nonlinear, electric current regulation of the AHE in a single, novel, van der Waals, room-temperature, ferromagnetic, ultrathin, two-dimensional (2D) crystal for intrinsic sensitivity of nodal electronic structures induced by 2D spin-orbit coupling (SOC) in a 2D quantum limit with an ultrasmall current (∼10<sup>2</sup> A cm<sup>−2</sup>). The multivalued electrical tuning of anomalous Hall resistance (R<sub>AHE</sub>) (<span><math><mrow is=\"true\"><mfrac is=\"true\"><mrow is=\"true\"><msub is=\"true\"><mi is=\"true\" mathvariant=\"bold-italic\">R</mi><mrow is=\"true\"><mi is=\"true\" mathvariant=\"bold-italic\">A</mi><mi is=\"true\" mathvariant=\"bold-italic\">H</mi><mi is=\"true\" mathvariant=\"bold-italic\">E</mi></mrow></msub><mn is=\"true\" mathvariant=\"bold\">1</mn></mrow><mrow is=\"true\"><msub is=\"true\"><mi is=\"true\" mathvariant=\"bold-italic\">R</mi><mrow is=\"true\"><mi is=\"true\" mathvariant=\"bold-italic\">A</mi><mi is=\"true\" mathvariant=\"bold-italic\">H</mi><mi is=\"true\" mathvariant=\"bold-italic\">E</mi></mrow></msub><mn is=\"true\" mathvariant=\"bold\">2</mn></mrow></mfrac><mo is=\"true\">∗</mo><mn is=\"true\" mathvariant=\"bold\">100</mn><mo is=\"true\">%</mo></mrow></math></span>) is up to 584% and remains 126% at room temperature. The squared correlation between R<sub>AHE</sub> and longitudinal resistance indicates an SOC-dominated Berry curvature-induced AHE. This immediate-current AHE with distinct dependence on the dimension, crystal layer, and electronic topology provides unique quantum platforms for probing the essence of the dimension and for low-power spintronics and brain-like quantum devices.","PeriodicalId":388,"journal":{"name":"Matter","volume":"120 1","pages":""},"PeriodicalIF":17.3000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Matter","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.matt.2024.101940","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Electrical control of the anomalous Hall effect (AHE) provides an important gateway to reveal and regulate topological properties of spins. However, direct, immediate electrical tuning of the AHE in materials has been elusive, unfeasible, and rarely reported. Here, we demonstrate direct, immediate, nonlinear, electric current regulation of the AHE in a single, novel, van der Waals, room-temperature, ferromagnetic, ultrathin, two-dimensional (2D) crystal for intrinsic sensitivity of nodal electronic structures induced by 2D spin-orbit coupling (SOC) in a 2D quantum limit with an ultrasmall current (∼102 A cm−2). The multivalued electrical tuning of anomalous Hall resistance (RAHE) () is up to 584% and remains 126% at room temperature. The squared correlation between RAHE and longitudinal resistance indicates an SOC-dominated Berry curvature-induced AHE. This immediate-current AHE with distinct dependence on the dimension, crystal layer, and electronic topology provides unique quantum platforms for probing the essence of the dimension and for low-power spintronics and brain-like quantum devices.
期刊介绍:
Matter, a monthly journal affiliated with Cell, spans the broad field of materials science from nano to macro levels,covering fundamentals to applications. Embracing groundbreaking technologies,it includes full-length research articles,reviews, perspectives,previews, opinions, personnel stories, and general editorial content.
Matter aims to be the primary resource for researchers in academia and industry, inspiring the next generation of materials scientists.