Indium alloying in ε -Ga2O3 for polarization and interfacial charge tuning

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-01-15 DOI:10.1063/5.0245828

Yan Wang, Yizhang Guan, Chuang Zhang, Jiahe Cao, Xuanyan Chen, Qiangqiang Ouyang, Yew Hoong Wong, Guofeng Hu, Chee Keong Tan

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引用次数: 0

Abstract

Density functional theory was utilized to assess the influence of In alloying on the spontaneous (Psp) and piezoelectric (Ppe) polarization of ε-Ga2O3 heterostructures with In concentrations ranging from 0% to 50%. The analysis demonstrated a decrease in both Psp and Ppe with an increase in In concentration, described by the equations Psp = −9.5947x + 24.81 and Ppe = −0.6217x (where x represents the In concentration, with units in μC/cm2). Additionally, the polarization-induced two-dimensional electron gas (2DEG) density within ε-InGaO/ε-Ga2O3 heterostructures was examined using a one-dimensional Schrödinger–Poisson solver. An inverse correlation was observed between 2DEG density and epitaxial thickness across all undoped In-alloyed samples. Furthermore, achieving high 2DEG densities (exceeding 1013 cm−2) is significantly facilitated by n-type doping concentrations above 1017 cm−3 in ε-InGaO. These insights not only augment the understanding of polarization effects in ε-Ga2O3 heterostructures but also provide a strategic framework for enhancing 2DEG density in ε-Ga2O3-based devices, which offers significant potential for advancing ε-Ga2O3-based high electron mobility transistors for power and RF applications.

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ε -Ga2O3中铟合金的极化和界面电荷调谐

利用密度泛函理论评价了In合金对0% ~ 50% In浓度ε-Ga2O3异质结构自发极化（Psp）和压电极化（Ppe）的影响。分析表明，随着in浓度的增加，Psp和Ppe均降低，公式为Psp =−9.5947x + 24.81, Ppe =−0.6217x（其中x代表in浓度，单位为μC/cm2）。此外，利用一维Schrödinger-Poisson求解器研究了ε-InGaO/ε-Ga2O3异质结构中极化诱导的二维电子气密度（2DEG）。在所有未掺杂的in -alloy样品中，2DEG密度与外延厚度呈负相关。此外，ε-InGaO中高于1017 cm−3的n型掺杂浓度显著促进了高2DEG密度（超过1013 cm−2）的实现。这些发现不仅增加了对ε-Ga2O3异质结构极化效应的理解，而且为提高ε-Ga2O3基器件的2DEG密度提供了战略框架，这为推进基于ε-Ga2O3的高电子迁移率晶体管的功率和射频应用提供了巨大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.