Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-01-15 DOI:10.1063/5.0238245

Yonghui Zhang, Rui Zhu, Wenxing Huo, Huili Liang, Zengxia Mei

引用次数: 0

Abstract

Mechanically exfoliated β-Ga2O3 flakes preserve bulk material's single crystallinity for easy integration but suffer from interfacial defects that greatly influence device performance. In this paper, we report a quantitative characterization of interfacial states in phrase β-Ga2O3/SiO2 thin-film transistors and then propose their beneficial application in achieving high-response broad-band photodetection. Photo-excited charge collection spectroscopy technique was employed to probe the interfacial states, revealing a substantial density (∼4 × 1012 cm−2 eV−1) of deep-level states ranging from 2.5 to 3.7 eV below the conduction band. Intriguingly, a photoresponsivity as high as 2 × 104 A/W was achieved via utilizing these interfacial states, along with the tunable broad-band response ranging from 335 to 496 nm. This research enhances both the well-industrialized silicon devices and the emerging β-Ga2O3 technologies. Furthermore, it introduces a profound concept: defects, once seen as flaws, can be assets when their characteristics are thoroughly understood.

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用于高响应宽带光探测的β-Ga2O3/SiO2 TFTs界面态探测

机械剥离的β-Ga2O3薄片保留了块体材料的单晶度，易于集成，但存在界面缺陷，严重影响器件性能。本文报道了β-Ga2O3/SiO2薄膜晶体管界面态的定量表征，并提出了其在实现高响应宽带光探测中的有益应用。利用光激发电荷收集光谱技术探测界面态，发现在传导带以下存在大量密度（~ 4 × 1012 cm−2 eV−1）的深能级态，范围在2.5 ~ 3.7 eV之间。有趣的是，通过利用这些界面状态，实现了高达2 × 104 a /W的光响应性，以及335至496nm的可调谐宽带响应。本研究提高了业已工业化的硅器件和新兴的β-Ga2O3技术。此外，它引入了一个深刻的概念：缺陷，一旦被视为缺陷，当它们的特征被彻底理解时，就可以成为资产。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.