Band Tailoring Enabled Perovskite Devices for X-Ray to Near-Infrared Photodetection

IF 14.3 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Yi-Chu He, Guan-Hua Dun, Jun Deng, Jia-Li Peng, Ken Qin, Jia-He Zhang, Xiang-Shun Geng, Min-Shu Zhang, Ze-Shu Wang, Yan Xie, Zhao-Qiang Bai, Dan Xie, He Tian, Yi Yang, Tian-Ling Ren
{"title":"Band Tailoring Enabled Perovskite Devices for X-Ray to Near-Infrared Photodetection","authors":"Yi-Chu He,&nbsp;Guan-Hua Dun,&nbsp;Jun Deng,&nbsp;Jia-Li Peng,&nbsp;Ken Qin,&nbsp;Jia-He Zhang,&nbsp;Xiang-Shun Geng,&nbsp;Min-Shu Zhang,&nbsp;Ze-Shu Wang,&nbsp;Yan Xie,&nbsp;Zhao-Qiang Bai,&nbsp;Dan Xie,&nbsp;He Tian,&nbsp;Yi Yang,&nbsp;Tian-Ling Ren","doi":"10.1002/advs.202414259","DOIUrl":null,"url":null,"abstract":"<p>Perovskite semiconductors have shown significant promise for photodetection due to their low effective carrier masses and long carrier lifetimes. However, achieving balanced detection across a broad spectrum—from X-rays to infrared—within a single perovskite photodetector presents challenges. These challenges stem from conflicting requirements for different wavelength ranges, such as the narrow bandgap needed for infrared detection and the low dark current necessary for X-ray sensitivity. To address this, this study have designed a type-II FAPbI<sub>3</sub> perovskite-based heterojunction featuring a large energy band offset utilizing narrow bandgap tellurium (Te) semiconductor. This innovative design broadens the detection range into the infrared while simultaneously reducing dark current noise. As-designed device allows for the detection of near infrared band, achieving a detectivity of 6.8 × 10<sup>9</sup> Jones at 1550 nm. The low dark current enables X-ray sensitivity of up to 1885.1 µC Gy⁻¹ cm⁻<sup>2</sup>. First-principles calculations confirm the type-II band structure alignment of the heterojunction, and a self-driven response behavior is realized. Moreover, this study have developed a scalable 40 × 1 sensor array, demonstrating the potential for wide-spectrum imaging applications. This work is expected to advance the application of perovskite-based wide-spectrum devices.</p>","PeriodicalId":117,"journal":{"name":"Advanced Science","volume":"12 9","pages":""},"PeriodicalIF":14.3000,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/advs.202414259","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Science","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/advs.202414259","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Perovskite semiconductors have shown significant promise for photodetection due to their low effective carrier masses and long carrier lifetimes. However, achieving balanced detection across a broad spectrum—from X-rays to infrared—within a single perovskite photodetector presents challenges. These challenges stem from conflicting requirements for different wavelength ranges, such as the narrow bandgap needed for infrared detection and the low dark current necessary for X-ray sensitivity. To address this, this study have designed a type-II FAPbI3 perovskite-based heterojunction featuring a large energy band offset utilizing narrow bandgap tellurium (Te) semiconductor. This innovative design broadens the detection range into the infrared while simultaneously reducing dark current noise. As-designed device allows for the detection of near infrared band, achieving a detectivity of 6.8 × 109 Jones at 1550 nm. The low dark current enables X-ray sensitivity of up to 1885.1 µC Gy⁻¹ cm⁻2. First-principles calculations confirm the type-II band structure alignment of the heterojunction, and a self-driven response behavior is realized. Moreover, this study have developed a scalable 40 × 1 sensor array, demonstrating the potential for wide-spectrum imaging applications. This work is expected to advance the application of perovskite-based wide-spectrum devices.

Abstract Image

用于x射线到近红外光探测的带剪裁钙钛矿装置。
钙钛矿半导体由于其低有效载流子质量和长载流子寿命而在光探测方面显示出巨大的前景。然而,在单个钙钛矿光电探测器中实现从x射线到红外的广谱平衡检测是一个挑战。这些挑战源于对不同波长范围的相互冲突的要求,例如红外探测所需的窄带隙和x射线灵敏度所需的低暗电流。为了解决这个问题,本研究设计了一种ii型FAPbI3钙钛矿基异质结,该异质结利用窄带隙碲(Te)半导体具有大的能带偏移。这种创新的设计将探测范围扩大到红外,同时减少暗电流噪声。设计的装置允许近红外波段的检测,在1550 nm处达到6.8 × 109琼斯的探测率。低暗电流使x射线灵敏度高达1885.1µC Gy⁻¹cm⁻2。第一性原理计算证实了异质结的ii型带结构取向,并实现了自驱动响应行为。此外,该研究还开发了可扩展的40 × 1传感器阵列,展示了广谱成像应用的潜力。这项工作有望推动钙钛矿基广谱器件的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Science
Advanced Science CHEMISTRY, MULTIDISCIPLINARYNANOSCIENCE &-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
18.90
自引率
2.60%
发文量
1602
审稿时长
1.9 months
期刊介绍: Advanced Science is a prestigious open access journal that focuses on interdisciplinary research in materials science, physics, chemistry, medical and life sciences, and engineering. The journal aims to promote cutting-edge research by employing a rigorous and impartial review process. It is committed to presenting research articles with the highest quality production standards, ensuring maximum accessibility of top scientific findings. With its vibrant and innovative publication platform, Advanced Science seeks to revolutionize the dissemination and organization of scientific knowledge.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信