Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Shumpei Kishi;Yoshiki Sugimoto;Kunio Sakakibara;Nobuyoshi Kikuma
{"title":"Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band","authors":"Shumpei Kishi;Yoshiki Sugimoto;Kunio Sakakibara;Nobuyoshi Kikuma","doi":"10.1109/JMW.2024.3481629","DOIUrl":null,"url":null,"abstract":"A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"5 1","pages":"180-189"},"PeriodicalIF":6.9000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10746389","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE journal of microwaves","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10746389/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.
从波导到薄衬底的宽带背短跃迁——270-GHz频段多层衬底集成波导
在 270 GHz 波段提出了一种从矩形波导(RWG)到小窄壁宽度基底集成波导(SIW)的宽带直角过渡技术。一般来说,由于 SIW 的特性阻抗较小,很难设计从标准 RWG 到小窄壁宽度 SIW 的宽带过渡。在本研究中,通过在多层基板上放置通孔并形成背短结构、短存根和电感引脚,获得了宽带特性。通过改变通孔的位置,可以独立控制两个谐振频率,从而获得超过 26% 的宽带宽。为了验证这一设计,我们制作了背靠背 DUT(被测设备),并在亚太赫兹频段进行了测量。测量结果和模拟结果非常吻合。在设计频率为 275 GHz 时,测量插入损耗约为 1.1 dB,在 234 GHz 至 308 GHz 范围内,测量反射损耗小于 -10 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
10.70
自引率
0.00%
发文量
0
审稿时长
8 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信