Lingju Meng, Mohammad Awashra, Seyed Mehran Mirmohammadi, Maryam Mousavi, Jaana Vapaavuori, Ville Jokinen, Sami Franssila
{"title":"Enhanced superhydrophobic robustness of black silicon employing nanojungle structures","authors":"Lingju Meng, Mohammad Awashra, Seyed Mehran Mirmohammadi, Maryam Mousavi, Jaana Vapaavuori, Ville Jokinen, Sami Franssila","doi":"10.1039/d4nr04226c","DOIUrl":null,"url":null,"abstract":"Superhydrophobic surfaces are essential in various industries such as textiles, aviation, electronics and biomedical devices due to their exceptional water-repellent properties. Black silicon (b-Si) would be an ideal candidate for some applications due to its nanoscale topography made with a convenient lithography-free step and Complementary Metal-Oxide-Semiconductor (CMOS) compatible fabrication process. However, its use is hindered by serious issues with mechanical robustness. This study presents ‘nanojungle b-Si,’ characterized by elongated and deep nanostructures and fabricated through photoresist micromasks associating with Bosch etching. These nanojungle structures exhibit enhanced robustness and sustain superhydrophobicity under abrasive conditions, outperforming traditional ‘nanograss b-Si.’ Optical analysis indicates that the nanojungle structures dissipate abrasive impact energy more effectively, preserving surface roughness and hydrophobicity. Notably, nanojungle b-Si maintains its superhydrophobicity even after impinging by 20 g of sand impacting from a height of 40 cm. This advancement in b-Si surfaces holds significant potential for enhancing future technological applications.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":"76 1","pages":""},"PeriodicalIF":5.8000,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4nr04226c","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Superhydrophobic surfaces are essential in various industries such as textiles, aviation, electronics and biomedical devices due to their exceptional water-repellent properties. Black silicon (b-Si) would be an ideal candidate for some applications due to its nanoscale topography made with a convenient lithography-free step and Complementary Metal-Oxide-Semiconductor (CMOS) compatible fabrication process. However, its use is hindered by serious issues with mechanical robustness. This study presents ‘nanojungle b-Si,’ characterized by elongated and deep nanostructures and fabricated through photoresist micromasks associating with Bosch etching. These nanojungle structures exhibit enhanced robustness and sustain superhydrophobicity under abrasive conditions, outperforming traditional ‘nanograss b-Si.’ Optical analysis indicates that the nanojungle structures dissipate abrasive impact energy more effectively, preserving surface roughness and hydrophobicity. Notably, nanojungle b-Si maintains its superhydrophobicity even after impinging by 20 g of sand impacting from a height of 40 cm. This advancement in b-Si surfaces holds significant potential for enhancing future technological applications.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.