Triazenide based metal precursors for vapour deposition

Abstract

Molecules featuring a metal centre in a positive valance surrounded by 1,3-dialkyltrianzenide ligands, M^x+(R–N=N–N–R’)_x, were shown to have both high thermal stability and volatility, making them interesting as precursors in chemical vapour deposition (CVD) and atomic layer deposition (ALD). So far, metals from groups 11-14 and lanthanoids form stable triazenides and the In and Ga triazenides have proven to be excellent precursors for InN, In₂O₃, GaN and InGaN. We believe the exploration of the triazenides as CVD and ALD precursors has only begun and hope to inspire further research with this perspective.