Gamma radiation-induced modifications in structural, optical, and electrical characteristics of p-NiO/n-Si heterojunction diodes

IF 2.8 3区物理与天体物理 Q3 CHEMISTRY, PHYSICAL

Radiation Physics and Chemistry Pub Date : 2025-01-07 DOI:10.1016/j.radphyschem.2025.112519

Ramazan Lok , Muhsin U. Doğan , Senol Kaya , Ugur Soykan , Cabir Terzioğlu

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Abstract

This study examines the effects of Co-60 gamma irradiation on the structural, chemical, optical, and electrical properties of p-NiO/n-Si heterojunction diodes. Various characterization techniques such as X-ray Diffraction (XRD), Fourier Transform Infrared (FTIR) spectroscopy, UV–Vis reflectance measurements, and electrical current-voltage (I–V) analysis were used to evaluate the changes caused by radiation. The XRD analysis showed that higher radiation doses caused shifts and broadening in the diffraction peak positions, which indicated a reduction in stress and an increase in grain size in the irradiated films. FTIR spectra revealed the weakening of Ni–O–Si bonds, as well as the emergence of Ni–O and Si–O stretching vibrations, particularly in film structures exposed to higher doses. Optical analyses demonstrated a decrease in bandgap energy values to 3.40 eV, 3.36 eV, and 3.34 eV due to the band tailing effect related to radiation-induced defects. Electrical measurements indicated a decrease in sheet resistance from 78.4 Ω/sq to 64.4 Ω/sq, changes in the diode's rectification behavior, and an increase in barrier height from 0.79 eV to 0.87 eV with higher radiation doses, while the ideality factor increased from 1.64 to 1.83. These findings highlight the significant effects of gamma irradiation on the structural and electronic properties of heterojunction diode materials and provide valuable insights for the design of radiation-resistant semiconductor devices.

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γ辐射诱导的p-NiO/n-Si异质结二极管结构、光学和电学特性的改变

本研究考察了Co-60 γ辐照对p-NiO/n-Si异质结二极管的结构、化学、光学和电学性能的影响。各种表征技术，如x射线衍射（XRD），傅里叶变换红外（FTIR）光谱，紫外-可见反射率测量和电流-电压（I-V）分析被用来评估辐射引起的变化。XRD分析表明，较高的辐照剂量使衍射峰位置发生位移和展宽，表明辐照膜的应力减小，晶粒尺寸增大。FTIR光谱揭示了Ni-O - si键的减弱，以及Ni-O和Si-O拉伸振动的出现，特别是在暴露于高剂量的薄膜结构中。光学分析表明，由于与辐射诱导缺陷相关的能带尾效应，带隙能量值下降到3.40 eV、3.36 eV和3.34 eV。电学测量表明，在较高的辐射剂量下，薄片电阻从78.4 Ω/sq降低到64.4 Ω/sq，二极管的整流行为发生了变化，势垒高度从0.79 eV增加到0.87 eV，而理想因子从1.64增加到1.83。这些发现强调了伽马辐射对异质结二极管材料结构和电子性能的显著影响，并为抗辐射半导体器件的设计提供了有价值的见解。

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来源期刊

Radiation Physics and Chemistry 化学-核科学技术

CiteScore

5.60

自引率

17.20%

发文量

574

审稿时长

12 weeks

期刊介绍： Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing. The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.