Gamma radiation-induced modifications in structural, optical, and electrical characteristics of p-NiO/n-Si heterojunction diodes

IF 2.8 3区 物理与天体物理 Q3 CHEMISTRY, PHYSICAL
Ramazan Lok, Muhsin U. Doğan, Senol Kaya, Ugur Soykan, Cabir Terzioğlu
{"title":"Gamma radiation-induced modifications in structural, optical, and electrical characteristics of p-NiO/n-Si heterojunction diodes","authors":"Ramazan Lok, Muhsin U. Doğan, Senol Kaya, Ugur Soykan, Cabir Terzioğlu","doi":"10.1016/j.radphyschem.2025.112519","DOIUrl":null,"url":null,"abstract":"This study examines the effects of Co-60 gamma irradiation on the structural, chemical, optical, and electrical properties of <ce:italic>p</ce:italic>-NiO/n-Si heterojunction diodes. Various characterization techniques such as X-ray Diffraction <ce:italic>(XRD)</ce:italic>, Fourier Transform Infrared <ce:italic>(FTIR)</ce:italic> spectroscopy, <ce:italic>UV–Vis</ce:italic> reflectance measurements, and electrical current-voltage <ce:italic>(I–V)</ce:italic> analysis were used to evaluate the changes caused by radiation. The XRD analysis showed that higher radiation doses caused shifts and broadening in the diffraction peak positions, which indicated a reduction in stress and an increase in grain size in the irradiated films. <ce:italic>FTIR</ce:italic> spectra revealed the weakening of <ce:italic>Ni–O–Si</ce:italic> bonds, as well as the emergence of <ce:italic>Ni–O</ce:italic> and <ce:italic>Si–O</ce:italic> stretching vibrations, particularly in film structures exposed to higher doses. Optical analyses demonstrated a decrease in bandgap energy values to 3.40 eV, 3.36 eV, and 3.34 eV due to the band tailing effect related to radiation-induced defects. Electrical measurements indicated a decrease in sheet resistance from 78.4 Ω/sq to 64.4 Ω/sq, changes in the diode's rectification behavior, and an increase in barrier height from 0.79 eV to 0.87 eV with higher radiation doses, while the ideality factor increased from 1.64 to 1.83. These findings highlight the significant effects of gamma irradiation on the structural and electronic properties of heterojunction diode materials and provide valuable insights for the design of radiation-resistant semiconductor devices.","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"20 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1016/j.radphyschem.2025.112519","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

This study examines the effects of Co-60 gamma irradiation on the structural, chemical, optical, and electrical properties of p-NiO/n-Si heterojunction diodes. Various characterization techniques such as X-ray Diffraction (XRD), Fourier Transform Infrared (FTIR) spectroscopy, UV–Vis reflectance measurements, and electrical current-voltage (I–V) analysis were used to evaluate the changes caused by radiation. The XRD analysis showed that higher radiation doses caused shifts and broadening in the diffraction peak positions, which indicated a reduction in stress and an increase in grain size in the irradiated films. FTIR spectra revealed the weakening of Ni–O–Si bonds, as well as the emergence of Ni–O and Si–O stretching vibrations, particularly in film structures exposed to higher doses. Optical analyses demonstrated a decrease in bandgap energy values to 3.40 eV, 3.36 eV, and 3.34 eV due to the band tailing effect related to radiation-induced defects. Electrical measurements indicated a decrease in sheet resistance from 78.4 Ω/sq to 64.4 Ω/sq, changes in the diode's rectification behavior, and an increase in barrier height from 0.79 eV to 0.87 eV with higher radiation doses, while the ideality factor increased from 1.64 to 1.83. These findings highlight the significant effects of gamma irradiation on the structural and electronic properties of heterojunction diode materials and provide valuable insights for the design of radiation-resistant semiconductor devices.
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来源期刊
Radiation Physics and Chemistry
Radiation Physics and Chemistry 化学-核科学技术
CiteScore
5.60
自引率
17.20%
发文量
574
审稿时长
12 weeks
期刊介绍: Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing. The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.
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