High sensitivity of UV photodetector based on SnO2-ZnO/P-Si heterojunctions prepared by hydrothermal method

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-01-11 DOI:10.1007/s11082-024-08031-w

Abd alhameed A. Hameed, J. F. Mohammad, Isam M. Ibrahim

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Abstract

This study aimed to fabricate an ultraviolet (UV) photodetector by using nanocomposite films of tin oxide (SnO₂) and zinc oxide (ZnO) prepared through the hydrothermal method. X-ray diffraction analysis revealed that the films exhibited polycrystalline structures, with crystallite sizes of 11.55 nm for ZnO and 6.87 nm for SnO₂. Crystallite size decreased because of the incorporation of ZnO into the SnO₂ lattice. Field-emission scanning electron microscopy images demonstrated that the nanoparticles possessed a spherical shape, and their morphology did not change after mixing ZnO and SnO₂. Energy-dispersive X-ray spectroscopy confirmed the purity of the nanocomposite films and the lack of foreign particles or impurities. Optical measurements indicated improved optical transmittance and increased energy band gap with high ZnO ratios, reflecting the influence of nanocomposite formation on the films’ optical properties. Hall effect measurements showed that all the films exhibited n-type conductivity. I–V measurements revealed Schottky’s behavior in the mixed films, with a considerable and rapid increase in photocurrent upon UV light exposure. The films demonstrated exceptional sensitivity of 1082% and a quantum efficiency of 71.01% at a 10% ZnO mixing ratio, as well as fast rise and fall times of less than one second. These findings highlight the potential of SnO₂-ZnO nanocomposites for advanced applications in UV detection, environmental monitoring, and optoelectronic device development.

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水热法制备SnO2-ZnO/P-Si异质结的高灵敏度紫外探测器

本研究旨在利用水热法制备的氧化锡（SnO2）和氧化锌（ZnO）纳米复合薄膜制备紫外（UV）光电探测器。x射线衍射分析表明，薄膜具有多晶结构，ZnO的晶粒尺寸为11.55 nm， SnO₂的晶粒尺寸为6.87 nm。由于ZnO在sno2晶格中掺入，晶粒尺寸减小。场发射扫描电镜结果表明，ZnO和sno2混合后，纳米颗粒呈球形，其形貌没有发生变化。能量色散x射线光谱证实了纳米复合膜的纯度和缺乏外来颗粒或杂质。光学测量表明，高ZnO比可以提高薄膜的透光率，增加能带隙，这反映了纳米复合材料的形成对薄膜光学性能的影响。霍尔效应测量表明，所有薄膜都具有n型电导率。I-V测量揭示了混合薄膜中的肖特基行为，在紫外线照射下光电流显著而迅速地增加。在ZnO掺杂比为10%时，薄膜的灵敏度为1082%，量子效率为71.01%，且上升和下降时间小于1秒。这些发现突出了SnO₂-ZnO纳米复合材料在紫外线检测、环境监测和光电子器件开发方面的先进应用潜力。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.