{"title":"Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth.","authors":"A-Ran Shin, Tae-Hun Gu, Yun-Ji Shin, Seong-Min Jeong, Heesoo Lee, Si-Young Bae","doi":"10.3390/nano15010007","DOIUrl":null,"url":null,"abstract":"<p><p>This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity. The pre-melting process notably enhanced the structural, optical, and electrical properties of the crystals by effectively eliminating impurities such as Si and Fe. Specifically, employing a 100% CO<sub>2</sub> atmosphere during pre-melting proved to be highly effective, reducing impurity concentrations and carrier scattering, which resulted in a decreased carrier concentration and an increased electron mobility in the grown Ga<sub>2</sub>O<sub>3</sub> single crystals. These results demonstrate that pre-melting is a crucial technique for substantially improving crystal quality, thereby promising better performance in β-Ga<sub>2</sub>O<sub>3</sub>-based device applications.</p>","PeriodicalId":18966,"journal":{"name":"Nanomaterials","volume":"15 1","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11722084/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/nano15010007","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity. The pre-melting process notably enhanced the structural, optical, and electrical properties of the crystals by effectively eliminating impurities such as Si and Fe. Specifically, employing a 100% CO2 atmosphere during pre-melting proved to be highly effective, reducing impurity concentrations and carrier scattering, which resulted in a decreased carrier concentration and an increased electron mobility in the grown Ga2O3 single crystals. These results demonstrate that pre-melting is a crucial technique for substantially improving crystal quality, thereby promising better performance in β-Ga2O3-based device applications.
期刊介绍:
Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.