Effect of different substrates on the structural, morphological, electrical, and optical properties of β-Ga2O3 thin films deposited by the sol-gel spin coating method

IF 2.3 4区材料科学 Q2 MATERIALS SCIENCE, CERAMICS

Journal of Sol-Gel Science and Technology Pub Date : 2024-10-24 DOI:10.1007/s10971-024-06585-5

Lobna Messeddek, Fatma Amraoui, Louiza Arab, Nouredine Sengouga

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Abstract

β-Ga₂O₃ thin films were successfully deposited on sapphire, quartz, and silicon substrates using a sol-gel spin coating method. This study aims to investigate the influence of different substrates on the properties of β-Ga₂O₃ thin films. The properties of the films were analyzed using various techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM, TUNA), Fourier transform infrared (FTIR) spectroscopy, and ultraviolet-visible (UV-Vis) spectrophotometry. XRD analyses revealed that all deposited films exhibited a polycrystalline structure with a monoclinic β-phase, with the best crystallinity observed on the sapphire substrate, showing a crystallite size of 35.92 nm. SEM micrographs displayed a granular morphology with varying granule sizes. AFM (TUNA) analysis was used to examine surface morphology and current transport characteristics, showing that surface roughness increased from quartz to sapphire to silicon (2.94 nm, 4.8 nm, and 7.01 nm, respectively). Electrical resistivity increased in the order: quartz, silicon, and sapphire. The highest transmission, nearly 100% in the visible spectrum, was observed for the β-Ga₂O₃ film grown on the sapphire substrate, which also had a band gap of approximately 5.4 eV as evaluated from UV-Vis spectrophotometry.

Graphical Abstract

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不同衬底对溶胶-凝胶自旋镀膜法制备β-Ga2O3薄膜结构、形貌、电学和光学性能的影响

利用溶胶-凝胶自旋镀膜方法成功地在蓝宝石、石英和硅基片上沉积了β-Ga₂O₃薄膜。本研究旨在研究不同衬底对β-Ga₂O₃薄膜性能的影响。利用x射线衍射（XRD）、扫描电子显微镜（SEM）、原子力显微镜（AFM， TUNA）、傅里叶变换红外光谱（FTIR）和紫外可见分光光度（UV-Vis）等技术对膜的性能进行了分析。XRD分析表明，所有沉积膜均呈现单斜β相的多晶结构，其中蓝宝石衬底上的结晶度最高，晶粒尺寸为35.92 nm。扫描电镜显示颗粒形态，颗粒大小不一。AFM （TUNA）分析表明，表面粗糙度从石英到蓝宝石再到硅均有所增加（分别为2.94 nm、4.8 nm和7.01 nm）。电阻率增加的顺序为：石英、硅、蓝宝石。在蓝宝石衬底上生长的β-Ga₂O₃薄膜的透射率最高，在可见光谱中接近100%，其带隙约为5.4 eV。图形抽象

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来源期刊

Journal of Sol-Gel Science and Technology 工程技术-材料科学：硅酸盐

CiteScore

4.70

自引率

4.00%

发文量

280

审稿时长

2.1 months

期刊介绍： The primary objective of the Journal of Sol-Gel Science and Technology (JSST), the official journal of the International Sol-Gel Society, is to provide an international forum for the dissemination of scientific, technological, and general knowledge about materials processed by chemical nanotechnologies known as the "sol-gel" process. The materials of interest include gels, gel-derived glasses, ceramics in form of nano- and micro-powders, bulk, fibres, thin films and coatings as well as more recent materials such as hybrid organic-inorganic materials and composites. Such materials exhibit a wide range of optical, electronic, magnetic, chemical, environmental, and biomedical properties and functionalities. Methods for producing sol-gel-derived materials and the industrial uses of these materials are also of great interest.