{"title":"Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes","authors":"Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun","doi":"10.1109/LMWT.2024.3495722","DOIUrl":null,"url":null,"abstract":"Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (\n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable \n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n by changing the groove size. The equivalent series capacitor (\n<inline-formula> <tex-math>$C_{\\text {r}}$ </tex-math></inline-formula>\n) is introduced due to the etched grooves, and consequently, \n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured \n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"115-118"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10766671/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (
$K^{2}$
) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable
$K^{2}$
by changing the groove size. The equivalent series capacitor (
$C_{\text {r}}$
) is introduced due to the etched grooves, and consequently,
$K^{2}$
is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured
$K^{2}$
of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.