Donglou Ren, Boyang Fu, Jun Xiong, Yi Wang, Bin Zhu, Shuo Chen, Zhiqiang Li, Hongli Ma, Xianghua Zhang, Daocheng Pan, Bingsuo Zou, Guangxing Liang
{"title":"PO43− Tetrahedron Assisted Chelate Engineering for 10.67%-Efficient Antimony Selenosulfide Solar Cells","authors":"Donglou Ren, Boyang Fu, Jun Xiong, Yi Wang, Bin Zhu, Shuo Chen, Zhiqiang Li, Hongli Ma, Xianghua Zhang, Daocheng Pan, Bingsuo Zou, Guangxing Liang","doi":"10.1002/adma.202416885","DOIUrl":null,"url":null,"abstract":"Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb<sub>2</sub>(S,Se)<sub>3</sub>) absorber are two vital auses restraining the photovoltaic performance of this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb<sub>2</sub>(S,Se)<sub>3</sub> film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO<sub>4</sub><sup>3−</sup> ion in dibasic sodium phosphate (Na<sub>2</sub>HPO<sub>4</sub>, DSP). The PO<sub>4</sub><sup>3−</sup> Lewis structure, on one hand in the form of [(SbO)<sub>3</sub>(PO<sub>4</sub>)] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO<sub>4</sub><sup>3−</sup> inhibits horizontal growth of (Sb<sub>4</sub>S(e)<sub>6</sub>)<sub>n</sub> ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO<sub>4</sub><sup>3−</sup> effectively passivates the antisite defect Sb<sub>S1</sub>. These synergistic effects have effectively improved carrier transport and reduced non-radiative recombination of the Sb<sub>2</sub>(S,Se)<sub>3</sub> absorber. Consequently, the DSP-modified Sb<sub>2</sub>(S,Se)<sub>3</sub> device efficiency increases from 8.59% to 10.67%.","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"6 1","pages":""},"PeriodicalIF":27.4000,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adma.202416885","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb2(S,Se)3) absorber are two vital auses restraining the photovoltaic performance of this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb2(S,Se)3 film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO43− ion in dibasic sodium phosphate (Na2HPO4, DSP). The PO43− Lewis structure, on one hand in the form of [(SbO)3(PO4)] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO43− inhibits horizontal growth of (Sb4S(e)6)n ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO43− effectively passivates the antisite defect SbS1. These synergistic effects have effectively improved carrier transport and reduced non-radiative recombination of the Sb2(S,Se)3 absorber. Consequently, the DSP-modified Sb2(S,Se)3 device efficiency increases from 8.59% to 10.67%.
期刊介绍:
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