Enhanced piezoelectricity in CaBi2Nb2O9 high-temperature piezoelectric ceramics: low-temperature sintering and weak texturing

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-09 DOI:10.1007/s10854-024-14206-8

Z. P. Wang, C. B. Pan, L. H. Yin, W. H. Song, X. B. Zhu, J. Yang, Y. P. Sun

{"title":"Enhanced piezoelectricity in CaBi2Nb2O9 high-temperature piezoelectric ceramics: low-temperature sintering and weak texturing","authors":"Z. P. Wang, C. B. Pan, L. H. Yin, W. H. Song, X. B. Zhu, J. Yang, Y. P. Sun","doi":"10.1007/s10854-024-14206-8","DOIUrl":null,"url":null,"abstract":"<div>The effect of CeO2 sintering aid on the microstructural and electrical properties of CaBi2Nb2O9 ceramics was studied. The addition of CeO2 facilitates a reduction in the sintering temperature of CaBi2Nb2O9, improve the grain morphology, increase the relative density, and induce the c-axis oriented growth of some grains. The incorporation of some Ce ions into the B-sites of [NbO6] octahedra results in an increased tetragonal distortion, and therefore significantly affects the electrical properties of the ceramics. The sample with 0.6 wt% CeO2 exhibits an optimal performance with a large remanent polarization (Pr = 18.5 μC/cm2) and a piezoelectric coefficient (d33 = 20.8 pC/N). The results indicate that adding CeO2 as a sintering aid is an effective strategy for enhancing the performance of CaBi2Nb2O9 ceramics.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14206-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The effect of CeO₂ sintering aid on the microstructural and electrical properties of CaBi₂Nb₂O₉ ceramics was studied. The addition of CeO₂ facilitates a reduction in the sintering temperature of CaBi₂Nb₂O₉, improve the grain morphology, increase the relative density, and induce the c-axis oriented growth of some grains. The incorporation of some Ce ions into the B-sites of [NbO₆] octahedra results in an increased tetragonal distortion, and therefore significantly affects the electrical properties of the ceramics. The sample with 0.6 wt% CeO₂ exhibits an optimal performance with a large remanent polarization (P_r = 18.5 μC/cm²) and a piezoelectric coefficient (d₃₃ = 20.8 pC/N). The results indicate that adding CeO₂ as a sintering aid is an effective strategy for enhancing the performance of CaBi₂Nb₂O₉ ceramics.

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CaBi2Nb2O9高温压电陶瓷的增强压电性：低温烧结和弱织构

研究了CeO2助烧剂对CaBi2Nb2O9陶瓷显微组织和电性能的影响。CeO2的加入降低了CaBi2Nb2O9的烧结温度，改善了晶粒形貌，增加了相对密度，并诱导了部分晶粒的c轴取向生长。在[NbO6]八面体的b位中掺入一些Ce离子会导致四方畸变增加，从而显著影响陶瓷的电学性能。当CeO2浓度为0.6 wt%时，样品具有较大的剩余极化（Pr = 18.5 μC/cm2）和压电系数（d33 = 20.8 pC/N）。结果表明，添加CeO2助烧剂是提高CaBi2Nb2O9陶瓷性能的有效策略。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.