Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim
{"title":"W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor","authors":"Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim","doi":"10.1109/LMWT.2024.3499322","DOIUrl":null,"url":null,"abstract":"This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"83-86"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10767767/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.