Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO2-Buried Structure

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Journal Pub Date : 2024-12-25 DOI:10.1109/JPHOT.2024.3522498

Rongbin Xu;Yachao Wang;Mingchao Fang;Yang Mei;Leiying Ying;Daquan Yu;Baoping Zhang

{"title":"Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO2-Buried Structure","authors":"Rongbin Xu;Yachao Wang;Mingchao Fang;Yang Mei;Leiying Ying;Daquan Yu;Baoping Zhang","doi":"10.1109/JPHOT.2024.3522498","DOIUrl":null,"url":null,"abstract":"In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO\n<sub>2</sub>\n-buried structure by numerical simulations. Compared to conventional flat aperture VCSELs, tapered aperture VCSELs show the lower threshold current and higher slope efficiency, and can be attributed to the improvement of current distribution within the current injection aperture. Moreover, by adjusting the taper length, the current distribution in current injection aperture can be further changed, enabling single fundamental mode lasing. Additionally, the modulation bandwidth for tapered aperture VCSELs will also increase due to the reduction of parasitic capacitance. This research guides the development of high performance GaN VCSELs capable of achieving single transverse mode and high modulation rates for visible optical communication links and networks.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-5"},"PeriodicalIF":2.1000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10815608","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Journal","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10815608/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO ₂ -buried structure by numerical simulations. Compared to conventional flat aperture VCSELs, tapered aperture VCSELs show the lower threshold current and higher slope efficiency, and can be attributed to the improvement of current distribution within the current injection aperture. Moreover, by adjusting the taper length, the current distribution in current injection aperture can be further changed, enabling single fundamental mode lasing. Additionally, the modulation bandwidth for tapered aperture VCSELs will also increase due to the reduction of parasitic capacitance. This research guides the development of high performance GaN VCSELs capable of achieving single transverse mode and high modulation rates for visible optical communication links and networks.

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采用锥形sio2埋层结构改善gan基垂直腔面发射激光器性能

在具有绝缘体埋地结构的gan基垂直腔面发射激光器（VCSELs）中，强折射率引导将引入高阶模式。本文通过数值模拟，提出了一种基于氮化镓的具有锥形sio2埋地结构的VCSEL。与传统的平孔径vcsel相比，锥形孔径vcsel具有更低的阈值电流和更高的斜率效率，这可归因于电流注入孔径内电流分布的改善。此外，通过调整锥长，可以进一步改变电流注入孔径内的电流分布，实现单基模激光。此外，由于寄生电容的减小，锥形孔径vcsel的调制带宽也将增加。本研究指导了高性能GaN vcsel的开发，该vcsel能够实现可见光通信链路和网络的单横模和高调制速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Photonics Journal ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

4.50

自引率

8.30%

发文量

489

审稿时长

1.4 months

期刊介绍： Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.