Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2024-10-15 DOI:10.1007/s13391-024-00526-8

Minah Park, Jaewook Yoo, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Seohyeon Park, Jo Hak Jeong, Bongjoong Kim, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, Jiseok Kwon, Hagyoul Bae

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引用次数: 0

Abstract

Amorphous indium-gallium-zinc-oxide (a-IGZO) has been attracting great attention as a channel material for dynamic random access memory (DRAM) cell transistors due to its superior characteristics including low leakage current, large area deposition, and back-end-of-line (BEOL) compatibility. It should be clearly taken into account that DRAM will also be used in harsh environments such as military surveillance, aerospace, and nuclear power plants. Especially, these situations can cause inevitable and persistent degradation in long-term operations. When the a-IGZO thin film transistors (TFTs) were irradiated by gamma-ray with total doses of 500 Gy, threshold voltage (V_T) was negatively shifted and hysteresis (delta of V_T between forward and backward sweeps) was increased by creating a positive charge in gate insulator. The extracted density-of-states (DOS) and fitted model were employed to investigate the behavior of oxygen vacancy (V_O) in a-IGZO thin film. Electrical performance degraded by gamma-ray irradiation such as changes in V_T, border trap, tail acceptor-like states (g_TA(E)), and shallow donor-like states (g_SD(E)) were recovered through rapid thermal annealing (RTA) under the O₂ ambient.

Graphical Abstract

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O2环境下快速热退火恢复γ射线辐照下a-IGZO tft的劣化

非晶铟镓锌氧化物（a- igzo）作为动态随机存取存储器（DRAM）电池晶体管的通道材料，由于其具有低漏电流、大面积沉积和后端线（BEOL）兼容性等优异特性而备受关注。DRAM还将在军事监视、航空航天、核电站等恶劣环境中使用，这一点必须考虑在内。特别是，这些情况在长期操作中可能导致不可避免的持续退化。当总剂量为500 Gy的γ射线照射a- igzo薄膜晶体管（TFTs）时，阈值电压（VT）发生负移，栅极绝缘体中产生正电荷，导致磁滞（前扫和后扫之间的VT增量）增加。利用提取的态密度（DOS）和拟合模型研究了a-IGZO薄膜中氧空位（VO）的行为。通过在O2环境下的快速热退火（RTA），恢复了伽玛射线辐照导致的电学性能下降，如VT、边界陷阱、尾受体样态（gTA(E)）和浅层供体样态（gSD(E)）的变化。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.