{"title":"Universal multigas evanescent field absorption sensor in mid IR based on SOS slot waveguide","authors":"Karishma Joshi, Bharat Lal Meena, Kanchan Gehlot","doi":"10.1007/s11082-024-08004-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the design of a novel universal multigas evanescent field absorption sensor based on a silicon-on-sapphire slot waveguide is proposed for sensing trace gases in the mid-infrared. The design features a small waveguide cross-section of 0.74 <span>\\(\\upmu\\)</span>m <span>\\(\\times 1.4\\)</span> <span>\\(\\upmu\\)</span>m and waveguide length of 0.33 cm. The multigas sensor is optimized for sensing carbon dioxide, nitrous oxide, ammonia, and methane gas by operating the waveguide sensor at their characteristic absorption wavelengths of 2.76, 2.86, 3.00, and 3.315 <span>\\(\\upmu\\)</span>m, respectively, using the same waveguide structure. A high evanescent field ratio of approximately 50<span>\\(\\%\\)</span> has been obtained for all four gases. The sensitivity of the trace gas sensor is estimated as 4.04<span>\\(\\times 10^{-5}\\)</span>, 4.17<span>\\(\\times 10^{-5}\\)</span>, 4.88<span>\\(\\times 10^{-5}\\)</span>, 118.71 <span>\\(\\times 10^{-4}\\)</span> <span>\\(\\hbox {ppm}^{-1}\\)</span>, and the limits of detection are obtained as 8.80, 8.44, 7.25 and 0.25 ppb for carbon dioxide, nitrous oxide, ammonia, and methane gas molecules, respectively. The universal multigas sensor shows better sensitivity than the sensor based on conventional strip waveguide. The high sensitivity for multigas sensing, low limit of detection, small footprint, and CMOS compatibility of the multigas sensor make it suitable for on-chip applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-08004-z","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the design of a novel universal multigas evanescent field absorption sensor based on a silicon-on-sapphire slot waveguide is proposed for sensing trace gases in the mid-infrared. The design features a small waveguide cross-section of 0.74 \(\upmu\)m \(\times 1.4\)\(\upmu\)m and waveguide length of 0.33 cm. The multigas sensor is optimized for sensing carbon dioxide, nitrous oxide, ammonia, and methane gas by operating the waveguide sensor at their characteristic absorption wavelengths of 2.76, 2.86, 3.00, and 3.315 \(\upmu\)m, respectively, using the same waveguide structure. A high evanescent field ratio of approximately 50\(\%\) has been obtained for all four gases. The sensitivity of the trace gas sensor is estimated as 4.04\(\times 10^{-5}\), 4.17\(\times 10^{-5}\), 4.88\(\times 10^{-5}\), 118.71 \(\times 10^{-4}\)\(\hbox {ppm}^{-1}\), and the limits of detection are obtained as 8.80, 8.44, 7.25 and 0.25 ppb for carbon dioxide, nitrous oxide, ammonia, and methane gas molecules, respectively. The universal multigas sensor shows better sensitivity than the sensor based on conventional strip waveguide. The high sensitivity for multigas sensing, low limit of detection, small footprint, and CMOS compatibility of the multigas sensor make it suitable for on-chip applications.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.