Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2024-09-24 DOI:10.1007/s13391-024-00522-y

Kwan-Jun Heo, Jae-Yun Lee, Gergely Tarsoly, Sung-Jin Kim

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引用次数: 0

Abstract

This study investigates the utilization of MoO₃ precursors to enhance the electrical properties and stability of In₂O₃ TFTs based on eco-friendly aqueous solutions. Specifically, MoO₃ doped In₂O₃ (Mo-In₂O₃) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO₃ precursor provide free electrons to the In₂O₃ thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In₂O₃ TFT due to MoO₃ doping, measurements of electron mobility after 30 days confirmed that In₂O₃ TFT electron mobility decreased by more than 80%, whereas Mo-In₂O₃ TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In₂O₃ TFT was less than that of In₂O₃ TFT. (In₂O₃ TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In₂O₃ TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In₂O₃ film according to MoO₃ Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In₂O₃ TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various V_DD conditions.

Graphical Abstract

Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.