Phase-Separated 2D PbBiI5 Halide Memristor for Neuromorphic Computing

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2024-11-08 DOI:10.1007/s13391-024-00528-6

Hee Joon Jung

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Abstract

Here, we report on the two-dimensional (2D) (PbI₂)_0.5(BiI₃)_0.5 mixed halide memristor, which exhibits nonlinear conductance that surpasses the properties of the simple combination of PbI₂ and BiI₃ binaries. This 2D system is phase-separated into Bi-rich and Bi-poor nanoscale domains rather than forming a single homogeneous phase. Phase boundaries, predominantly featuring iodine vacancies or stacking faults, induce a novel memristive behavior along the c-axis, driven by ion transport perpendicular to the layered structure, making it promising for resistive switching memory (RRAM) applications. In-situ biasing transmission electron microscopy (TEM) reveals the formation of iodine filaments under sweep bias, with ion migration occurring mainly through phase boundaries in the out-of-plane direction. Direct observation of reversible filament formation in this phase-separated iodide system provides new insights into defect-mediated ion migration, resulting in nonlinear resistive switching, with potential applications in neuromorphic computing. The ability to track heavy anions like iodine in the halide memristor provides valuable insights into the similar correlation mechanisms between ion migration and defects in oxide or sulfide-based memristors. This capability could shed light on how defects influence ion transport in a broader range of materials, enhancing the development of resistive switching devices.

Graphical Abstract

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用于神经形态计算的2D相分离PbBiI5卤化物记忆电阻器

在这里，我们报道了二维（2D）（PbI2）0.5(BiI3)0.5混合卤化物忆阻器，其非线性电导优于PbI2和BiI3二元结构的简单组合。该二维体系相分离为富bi和贫bi纳米级畴，而不是形成单一的均匀相。相边界主要以碘空位或堆叠错误为特征，在垂直于层状结构的离子输运驱动下，沿c轴诱导出一种新的记忆行为，使其有望用于电阻开关存储器（RRAM）应用。原位偏置透射电子显微镜（TEM）显示，在扫描偏置下，碘丝的形成，离子迁移主要发生在面外方向的相界上。直接观察这种相分离碘化物系统中可逆灯丝的形成，为缺陷介导的离子迁移提供了新的见解，从而导致非线性电阻开关，在神经形态计算中具有潜在的应用。在卤化物记忆电阻器中跟踪像碘这样的重阴离子的能力，为离子迁移与氧化物或硫化物基记忆电阻器缺陷之间的类似相关机制提供了有价值的见解。这种能力可以揭示缺陷如何影响更广泛材料中的离子输运，从而促进电阻开关器件的发展。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.