Thermal influence on the current–voltage characteristics of TiN/Al2O3/p-Si MIS devices for emerging nanotechnology applications

IF 1.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Bulletin of Materials Science Pub Date : 2025-01-03 DOI:10.1007/s12034-024-03375-1

Slah Hlali, Neila Hizem, Liviu Militaru, Adel Kalboussi, Abdelkader Souifi

{"title":"Thermal influence on the current–voltage characteristics of TiN/Al2O3/p-Si MIS devices for emerging nanotechnology applications","authors":"Slah Hlali, Neila Hizem, Liviu Militaru, Adel Kalboussi, Abdelkader Souifi","doi":"10.1007/s12034-024-03375-1","DOIUrl":null,"url":null,"abstract":"<div>This study investigates the current–voltage (I–V) characteristics of a Schottky Metal-Insulator-Semiconductor (MIS) structure, specifically featuring a titanium nitride (TiN) electrode interfaced with p-type silicon (p-Si) and a high-k aluminum oxide (Al2O3) layer with a thickness of 17 nm, enabling a detailed analysis of its influence on device performance. Conducted over a temperature range of 270 to 450 K, the research employs thermionic emission (TE) theory to extract critical electrical parameters, including reverse saturation current (I0), ideality factor (n), zero bias barrier height (\\(\\Phi_{B0}\\)), series resistance (Rs) and rectification rate (RR). The analysis reveals a mean barrier height (BH) of 0.274 eV and a Richardson constant (A*) of 42.19 A (cm K)−1, both of which closely align with theoretical predictions for p-type silicon, suggesting that the thermionic emission mechanism, characterised by a Gaussian distribution of barrier heights, effectively describes the I–V–T behaviour of the fabricated Schottky structure. These findings elucidate the complex interplay between temperature and diode performance, offering significant insights for the optimisation and design of thermally-sensitive electronic devices leveraging this advanced Schottky MIS configuration.</div>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":"48 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12034-024-03375-1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

This study investigates the current–voltage (I–V) characteristics of a Schottky Metal-Insulator-Semiconductor (MIS) structure, specifically featuring a titanium nitride (TiN) electrode interfaced with p-type silicon (p-Si) and a high-k aluminum oxide (Al₂O₃) layer with a thickness of 17 nm, enabling a detailed analysis of its influence on device performance. Conducted over a temperature range of 270 to 450 K, the research employs thermionic emission (TE) theory to extract critical electrical parameters, including reverse saturation current (I₀), ideality factor (n), zero bias barrier height (\(\Phi_{B0}\)), series resistance (Rs) and rectification rate (RR). The analysis reveals a mean barrier height (BH) of 0.274 eV and a Richardson constant (A*) of 42.19 A (cm K)⁻¹, both of which closely align with theoretical predictions for p-type silicon, suggesting that the thermionic emission mechanism, characterised by a Gaussian distribution of barrier heights, effectively describes the I–V–T behaviour of the fabricated Schottky structure. These findings elucidate the complex interplay between temperature and diode performance, offering significant insights for the optimisation and design of thermally-sensitive electronic devices leveraging this advanced Schottky MIS configuration.

查看原文本刊更多论文

热对新兴纳米技术应用中TiN/Al2O3/p-Si MIS器件电流-电压特性的影响

本研究研究了肖特基金属-绝缘体-半导体（MIS）结构的电流-电压（I-V）特性，特别是氮化钛（TiN）电极与p型硅（p-Si）和厚度为17 nm的高k氧化铝（Al2O3）层的界面，从而详细分析了其对器件性能的影响。该研究在270 ～ 450 K的温度范围内进行，采用热离子发射（TE）理论提取关键电气参数，包括反向饱和电流（I0）、理想因数(n)、零偏置势垒高度（\(\Phi_{B0}\)）、串联电阻（Rs）和整流速率（RR）。分析表明，平均势垒高度（BH）为0.274 eV，理查德森常数（a *）为42.19 a (cm K)−1，两者都与p型硅的理论预测密切相关，这表明以势垒高度高斯分布为特征的热离子发射机制有效地描述了制备的肖特基结构的I-V-T行为。这些发现阐明了温度和二极管性能之间复杂的相互作用，为利用这种先进的肖特基MIS配置优化和设计热敏电子器件提供了重要的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Bulletin of Materials Science 工程技术-材料科学：综合

CiteScore

3.40

自引率

5.60%

发文量

209

审稿时长

11.5 months

期刊介绍： The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.