Synthesis and characterization of low-thermal-budget ilmenite-type [(Mg1-x Mnx)0.95Zn0.05]TiO3 (x = 0–0.4) microwave dielectrics for high-frequency applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yao-Chin Wang, Cheng-Che Ho, Chun-Hong Chen, Che-Hao Liao, Yong-Tai Xu, Po-Cheng Chen, Chien-Sheng Huang, Shih-Hung Lin
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引用次数: 0

Abstract

This paper researches ilmenite-type [(Mg1-xMnx)0.95Zn0.05]TiO3 dielectrics synthesized by the solid-state reaction method and the influence of Mg2⁺ by Mn2⁺ on the physical characterization, such as microstructure, crystallization, Raman spectra, and microwave dielectric properties, was investigated systematically. The microstructures and phases of the synthesized dielectrics were meticulously analyzed using EDS, SEM, XRD, XPS, and Raman spectroscopy. Optimization of the process conditions revealed that sintering temperature and time significantly impact the microwave dielectric properties, and further tuning Mn2⁺ doping concentration x can obtain the wide-range quality factor. The optimal dielectric properties for [(Mg0.8Mn0.2)0.95Zn0.05]TiO3 were achieved when sintered at 1250 °C for 3 h, including a permittivity (εr) of approximately 17.4, a quality factor (Qf) of around 180,000 GHz, and a temperature coefficient of resonance frequency (τf) of about − 58 ppm/°C. Due to its substantially reduced thermal budget and low-loss microwave dielectric properties, the proposed dielectrics demonstrate a high potential for applications in manufacturing high-quality substrates for high-frequency devices in 5G and beyond 5G communication systems.

低热预算钛铁矿型[(Mg1-x Mnx)0.95Zn0.05]TiO3 (x = 0-0.4)高频微波介质的合成与表征
本文研究了采用固相反应法合成钛铁矿型[(Mg1-xMnx)0.95Zn0.05]TiO3电介质,系统研究了Mn2 +对Mg2 +的微观结构、结晶、拉曼光谱、微波介电性能等物理表征的影响。采用EDS、SEM、XRD、XPS和拉曼光谱对合成的电介质进行了微观结构和物相分析。优化工艺条件发现,烧结温度和时间对Mn2 +的微波介电性能有显著影响,进一步调整Mn2 +掺杂浓度x可以获得大范围的质量因数。结果表明,[(Mg0.8Mn0.2)0.95Zn0.05]TiO3在1250℃烧结3 h时,介电常数εr约为17.4,质量因子Qf约为18万GHz,谐振频率温度系数τf约为- 58 ppm/°C。由于其大大降低了热预算和低损耗的微波介电性能,所提出的介电材料在制造5G及5G以上通信系统中高频器件的高质量基板方面显示出很高的应用潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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