{"title":"Synthesis and characterization of low-thermal-budget ilmenite-type [(Mg1-x Mnx)0.95Zn0.05]TiO3 (x = 0–0.4) microwave dielectrics for high-frequency applications","authors":"Yao-Chin Wang, Cheng-Che Ho, Chun-Hong Chen, Che-Hao Liao, Yong-Tai Xu, Po-Cheng Chen, Chien-Sheng Huang, Shih-Hung Lin","doi":"10.1007/s10854-024-14156-1","DOIUrl":null,"url":null,"abstract":"<div><p>This paper researches ilmenite-type [(Mg<sub>1-<i>x</i></sub>Mn<sub><i>x</i></sub>)<sub>0.95</sub>Zn<sub>0.05</sub>]TiO<sub>3</sub> dielectrics synthesized by the solid-state reaction method and the influence of Mg<sup>2</sup>⁺ by Mn<sup>2</sup>⁺ on the physical characterization, such as microstructure, crystallization, Raman spectra, and microwave dielectric properties, was investigated systematically. The microstructures and phases of the synthesized dielectrics were meticulously analyzed using EDS, SEM, XRD, XPS, and Raman spectroscopy. Optimization of the process conditions revealed that sintering temperature and time significantly impact the microwave dielectric properties, and further tuning Mn<sup>2</sup>⁺ doping concentration x can obtain the wide-range quality factor. The optimal dielectric properties for [(Mg<sub>0.8</sub>Mn<sub>0.2</sub>)<sub>0.95</sub>Zn<sub>0.05</sub>]TiO<sub>3</sub> were achieved when sintered at 1250 °C for 3 h, including a permittivity (<i>ε</i><sub><i>r</i></sub>) of approximately 17.4, a quality factor (<i>Qf</i>) of around 180,000 GHz, and a temperature coefficient of resonance frequency (τ<sub><i>f</i></sub>) of about − 58 ppm/°C. Due to its substantially reduced thermal budget and low-loss microwave dielectric properties, the proposed dielectrics demonstrate a high potential for applications in manufacturing high-quality substrates for high-frequency devices in 5G and beyond 5G communication systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14156-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper researches ilmenite-type [(Mg1-xMnx)0.95Zn0.05]TiO3 dielectrics synthesized by the solid-state reaction method and the influence of Mg2⁺ by Mn2⁺ on the physical characterization, such as microstructure, crystallization, Raman spectra, and microwave dielectric properties, was investigated systematically. The microstructures and phases of the synthesized dielectrics were meticulously analyzed using EDS, SEM, XRD, XPS, and Raman spectroscopy. Optimization of the process conditions revealed that sintering temperature and time significantly impact the microwave dielectric properties, and further tuning Mn2⁺ doping concentration x can obtain the wide-range quality factor. The optimal dielectric properties for [(Mg0.8Mn0.2)0.95Zn0.05]TiO3 were achieved when sintered at 1250 °C for 3 h, including a permittivity (εr) of approximately 17.4, a quality factor (Qf) of around 180,000 GHz, and a temperature coefficient of resonance frequency (τf) of about − 58 ppm/°C. Due to its substantially reduced thermal budget and low-loss microwave dielectric properties, the proposed dielectrics demonstrate a high potential for applications in manufacturing high-quality substrates for high-frequency devices in 5G and beyond 5G communication systems.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.