Improvement of Antistatic Discharge Performance of 1.3-μm AlGaInAs/InP Semiconductor Lasers

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2024-12-13 DOI:10.1109/LPT.2024.3517423

Mingjun Dai;Hui Lv;Chao Niu;Yunlong Du

引用次数: 0

Abstract

Electrostatic discharge (ESD) failure is a reliability concern for InP-based semiconductor lasers. An analysis of ESD-induced failures in AlGaInAs/InP-based DFB semiconductor lasers reveals that the primary degradation mechanism is optical absorption in the active layer at the laser facet. XPS results demonstrate that device failures caused by ESD can be effectively mitigated through surface cleaning and passivation, with this effect attributed to a reduction in non-radiative recombination at the facet.

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.