Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids

Abstract

Full color micro-displays with a pixel pitch of below 10 µm are needed for augmented and virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue (RGB) pixels could be achieved using monolithically integrated InGaN based micro-LEDs. Here, we report the growth of high optical quality RGB InGaN/InGaN quantum wells grown on InGaN nanopyramids of diameter less than 1 µm by metal organic vapor phase epitaxy. We synthesized the nanopyramids by nanoselective area growth using an in situ patterned epitaxial graphene on SiC as an embedded mask. The RGB emission properties at different locations on the sample are dependent on the size of the InGaN nanopyramids. Advanced correlative analysis conducted on the same transmission electron microscopy lamella reveal a fully or at least nearly relaxed In0.13Ga0.87N core and very regular quantum wells emitting in the red range (620 nm) along the pyramid sidewalls with an In content up to 40%. Full color micro-displays for augmented and virtual reality applications require a pixel pitch below 10 µm. Here, a metal organic vapor phase epitaxy method was demonstrated to grow high quality red-green-blue InGaN quantum wells on InGaN nanopyramids of less than 1 µm diameter with an In content up to 40%