Experimental and simulation study for an improved efficiency of 8.46% of a CTS thin-film solar cell: impact of tin (Sn) concentration on structural, optoelectronic properties and photovoltaic performance

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2024-12-26 DOI:10.1007/s11082-024-07951-x

Elarbi Laghchim, Abderrahim Raidou, Jamal Zimou, Amal Yousfi, Jaouad Mhalla, Abdelattif El-Habib, Atika Fahmi, Khalid Nouneh, Mustapha Rouchdi, Amine Belfhaili, M’hamed Taibi, Mounir Fahoume

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Abstract

In this study, we investigated the influence of tin concentration on the physical properties of eco-friendly CTS thin-film based solar cells deposited by means of the SILAR route. The results were discussed through several characterization techniques. XRD revealed the formation of Cu₂SnS₃ phase, along with peaks of CuS and Cu₄S₇ secondary phases, which diminished with increasing tin concentration. Raman spectroscopy confirmed the tetragonal crystalline structure of CTS films with (112) as the preferred orientation. The direct optical bandgap energy of the synthesized CTS films increased from 1.42 to 1.56 eV as the concentration of tin rose from 0.08 to 0.12 M. Electrical Hall effect measurements performed on the grown CTS layers revealed a p-type conductivity with hall mobility in the range 0.38–2.135 cm²/Vs and a carrier concentration between 3.93 × 10²¹ cm⁻³ and 7.68 × 10²¹ cm⁻³. Furthermore, using SCAPS-1D solar cell simulation software, the photovoltaic performance of the CTS-S1, CTS-S2 and CTS-S3 absorber layers has been evaluated. Despite the fact that the CTS-S1 absorber layer has more secondary phases and slightly lower mobility than the CTS-S2 and CTS-S3 layers, its excellent optical properties, including a high absorption coefficient (> 10⁴ cm⁻¹) and an optimal bandgap energy of 1.42 eV, enabled it to achieve the best efficiency of 8.46%.

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CTS薄膜太阳能电池效率提高至8.46%的实验与模拟研究：锡（Sn）浓度对结构、光电性能和光伏性能的影响

在本研究中，我们研究了锡浓度对SILAR法制备的生态友好型CTS薄膜太阳能电池物理性能的影响。结果通过几种表征技术进行了讨论。XRD分析表明，随着锡浓度的增加，Cu2SnS3相的形成，cu和Cu4S7次生相的峰逐渐减小。拉曼光谱证实了以（112）为优选取向的CTS薄膜的四方晶体结构。当锡浓度从0.08增加到0.12 m时，合成的CTS薄膜的直接光学带隙能从1.42 eV增加到1.56 eV。对生长的CTS层进行的霍尔效应测量表明，其p型电导率在0.38 ~ 2.135 cm2/Vs之间，载流子浓度在3.93 × 1021 cm−3和7.68 × 1021 cm−3之间。此外，利用SCAPS-1D太阳能电池模拟软件，对CTS-S1、CTS-S2和CTS-S3吸收层的光伏性能进行了评估。尽管CTS-S1吸收层的二次相较多，迁移率略低于CTS-S2和CTS-S3层，但其优异的光学性能，包括高吸收系数（> 104 cm−1）和1.42 eV的最佳带隙能量，使其达到8.46%的最佳效率。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.