Effect of annealing treatment on microstructure and properties of porous silicon combined alumina coating film for silicon solar cells application

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-27 DOI:10.1007/s10854-024-14137-4

Moez Salem, Bechir Mahmoud Yahmadi, Amel Haouas, Abdullah Almohammedi

{"title":"Effect of annealing treatment on microstructure and properties of porous silicon combined alumina coating film for silicon solar cells application","authors":"Moez Salem, Bechir Mahmoud Yahmadi, Amel Haouas, Abdullah Almohammedi","doi":"10.1007/s10854-024-14137-4","DOIUrl":null,"url":null,"abstract":"<div>Aluminum oxide (Al2O3) nanoparticle films were prepared using a two-step process: resistive evaporation of an aluminum (Al) layer onto a porous silicon (PS) substrate, followed by thermal oxidation in an oxygen-rich atmosphere. The optical and microstructural characterization of the resulting films revealed that a minimum annealing temperature of 650 °C is required to achieve complete oxidation of the Al layer. X-ray diffraction (XRD) and Raman spectroscopy analyses confirmed the structural transformation of the films from metallic Al to Al2O3 at this annealing temperature. Optical measurements, including reflectivity (R), further support these findings, as only films annealed at 650 °C exhibited a significant reduction in R, indicating the successful formation of the Al2O3 phase. These results underscore the critical role of annealing temperature in tailoring the structural and optical properties of Al2O3 films for potential applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14137-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Aluminum oxide (Al₂O₃) nanoparticle films were prepared using a two-step process: resistive evaporation of an aluminum (Al) layer onto a porous silicon (PS) substrate, followed by thermal oxidation in an oxygen-rich atmosphere. The optical and microstructural characterization of the resulting films revealed that a minimum annealing temperature of 650 °C is required to achieve complete oxidation of the Al layer. X-ray diffraction (XRD) and Raman spectroscopy analyses confirmed the structural transformation of the films from metallic Al to Al₂O₃ at this annealing temperature. Optical measurements, including reflectivity (R), further support these findings, as only films annealed at 650 °C exhibited a significant reduction in R, indicating the successful formation of the Al₂O₃ phase. These results underscore the critical role of annealing temperature in tailoring the structural and optical properties of Al₂O₃ films for potential applications.

查看原文本刊更多论文

退火处理对硅太阳能电池用多孔硅复合氧化铝涂层微观结构和性能的影响

氧化铝（Al2O3）纳米颗粒薄膜的制备采用两步工艺：将铝（Al）层电阻蒸发到多孔硅（PS）衬底上，然后在富氧气氛中进行热氧化。光学和微观结构表征表明，最低退火温度为650°C才能实现Al层的完全氧化。x射线衍射（XRD）和拉曼光谱分析证实了在该退火温度下薄膜从金属Al向Al2O3的结构转变。光学测量，包括反射率(R)，进一步支持了这些发现，因为只有在650°C退火的薄膜显示出R的显著降低，表明Al2O3相的成功形成。这些结果强调了退火温度在调整Al2O3薄膜的结构和光学性能方面的关键作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.