Trapping of optical pulse in negative index material via Kerr effect

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Dimishree Neog, Abhijeet Das, Subrata Hazarika
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引用次数: 0

Abstract

Kerr non-linearity can induce epsilon-near-zero material characteristics in negative index material when incident pulse intensity is at its threshold value. Such Kerr induced epsilon-near-zero regime in negative index material, where group velocity approaches zero and phase velocity diverges, is ideal for strong exciton -photon interaction that can lead to the formation of polaritons oscillating between photonic and excitonic states with frequency \(\frac{{\Omega_{R} }}{\sqrt \hbar }\), \(\Omega_{R}\) being the Rabi frequency. Quantum mechanical analysis using polariton dynamics shows that the optical pulse will be self-trapped in Kerr induced epsilon-near-zero regime and, thereby, suggest that maintaining the intensity of an incident light pulse at the threshold value in negative index material may be an alternative means to trap light, unlike slow light, stopped light or stationary light generated conventionally through electromagnetically induced transparency.

利用克尔效应捕获负折射率材料中的光脉冲
当入射脉冲强度达到其阈值时,克尔非线性可以诱导负折射率材料的epsilon-near-zero材料特性。这种克尔诱导的负折射率材料中的epsilon-near-zero状态,群速度接近于零,相速度分散,是强激子-光子相互作用的理想状态,这种相互作用可以导致在光子和激子状态之间振荡的极化子的形成,频率为\(\frac{{\Omega_{R} }}{\sqrt \hbar }\), \(\Omega_{R}\)为Rabi频率。利用极化子动力学的量子力学分析表明,光脉冲将在克尔诱导的epsiln -近零状态下被自捕获,因此,表明将入射光脉冲的强度保持在负折射率材料的阈值可能是捕获光的另一种方法,而不像传统上通过电磁感应透明产生的慢光、停止光或静止光。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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