{"title":"Dual-Gate Modulation in a Quantum Dots/MoS2 Thin-Film Transistor Gas Sensor","authors":"Yanting Tang, Bowen Zhou, Jingyao Liu, Xinyi Chen, Haizhen Wang, Zhixiang Hu, Rongyu Mao, Yingying Xing, Hua-Yao Li, Dehui Li, Huan Liu","doi":"10.1021/acssensors.4c02517","DOIUrl":null,"url":null,"abstract":"Mastering the surface chemistry of quantum dots (QDs) has enabled a remarkable gas-sensing response as well as impressive air stability. To overcome the intrinsic receptor-transducer mismatch of QDs, PbS QDs used as sensitive NO<sub>2</sub> receptors are spin-coated on top of a few-layer MoS<sub>2</sub> and incorporated into a thin-film transistor (TFT) gas sensor. This architecture enables the separation of the electron transduction function from the chemical reception function. A comparison study through size engineering of QDs combined with TFT device modeling suggests a unique dual-gate modulation related to the capacitance coupling effect of QDs. The favorable increase in sensor output current by 3 orders of magnitude is ascribed to the high mobility of the few-layer MoS<sub>2</sub>. The optimal sensor exhibits a sensitive (LOD ∼ 0.6 ppb), selective, and recoverable response at room temperature. Because of the dual-gate modulation, the sensor performance is further optimized by varying the gate voltage (a two-fold increase in response to 1 ppm of NO<sub>2</sub>).","PeriodicalId":24,"journal":{"name":"ACS Sensors","volume":"11 1","pages":""},"PeriodicalIF":9.1000,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Sensors","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1021/acssensors.4c02517","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Mastering the surface chemistry of quantum dots (QDs) has enabled a remarkable gas-sensing response as well as impressive air stability. To overcome the intrinsic receptor-transducer mismatch of QDs, PbS QDs used as sensitive NO2 receptors are spin-coated on top of a few-layer MoS2 and incorporated into a thin-film transistor (TFT) gas sensor. This architecture enables the separation of the electron transduction function from the chemical reception function. A comparison study through size engineering of QDs combined with TFT device modeling suggests a unique dual-gate modulation related to the capacitance coupling effect of QDs. The favorable increase in sensor output current by 3 orders of magnitude is ascribed to the high mobility of the few-layer MoS2. The optimal sensor exhibits a sensitive (LOD ∼ 0.6 ppb), selective, and recoverable response at room temperature. Because of the dual-gate modulation, the sensor performance is further optimized by varying the gate voltage (a two-fold increase in response to 1 ppm of NO2).
期刊介绍:
ACS Sensors is a peer-reviewed research journal that focuses on the dissemination of new and original knowledge in the field of sensor science, particularly those that selectively sense chemical or biological species or processes. The journal covers a broad range of topics, including but not limited to biosensors, chemical sensors, gas sensors, intracellular sensors, single molecule sensors, cell chips, and microfluidic devices. It aims to publish articles that address conceptual advances in sensing technology applicable to various types of analytes or application papers that report on the use of existing sensing concepts in new ways or for new analytes.