Öznur Arslan, Halil İbrahim Efkere, Erman Çokduygulular, Çağlar Çetinkaya, Caner İldeş, Barış Kınacı
{"title":"Analysis of Nb-doped and undoped TiO2 nanocoatings with varying dopant concentrations","authors":"Öznur Arslan, Halil İbrahim Efkere, Erman Çokduygulular, Çağlar Çetinkaya, Caner İldeş, Barış Kınacı","doi":"10.1007/s10854-024-14092-0","DOIUrl":null,"url":null,"abstract":"<div><p>Titanium dioxide (TiO<sub>2</sub>) without doped and with different amounts of niobium (Nb) doped coating with thicknesses of ~ 100 nm were deposited on glass and n-Si substrates at room temperature by radio frequency magnetron sputtering. Nb doping ratios were determined as 0% (NTO-0), 3% (NTO-3), 5% (NTO-5), and 7% (NTO-7). Structural, morphological, and optical analyses of NTO-0, NTO-3, NTO-5, and NTO-7 samples on a glass substrate were performed. The X-Ray Diffraction method performed the structures’ crystallite quality. Quantitative elemental microanalysis of the structure was performed by scanning electron microscopy with the energy dispersive spectroscopy method. The surface morphologies of the structures were performed by the Atomic Force Microscope system. The transmittance spectra of the structures were performed by UV–Visible Spectrometer systems. The electrical properties of the Au/n-Si structure with TiO<sub>2</sub> interface layer doped 3% Nb depending on the frequency (between 100 kHz to 1 MHz) and the voltage (in the range of ± 4 V) using <i>C–V</i> and <i>G/ω–V</i> characteristics were obtained.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14092-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Titanium dioxide (TiO2) without doped and with different amounts of niobium (Nb) doped coating with thicknesses of ~ 100 nm were deposited on glass and n-Si substrates at room temperature by radio frequency magnetron sputtering. Nb doping ratios were determined as 0% (NTO-0), 3% (NTO-3), 5% (NTO-5), and 7% (NTO-7). Structural, morphological, and optical analyses of NTO-0, NTO-3, NTO-5, and NTO-7 samples on a glass substrate were performed. The X-Ray Diffraction method performed the structures’ crystallite quality. Quantitative elemental microanalysis of the structure was performed by scanning electron microscopy with the energy dispersive spectroscopy method. The surface morphologies of the structures were performed by the Atomic Force Microscope system. The transmittance spectra of the structures were performed by UV–Visible Spectrometer systems. The electrical properties of the Au/n-Si structure with TiO2 interface layer doped 3% Nb depending on the frequency (between 100 kHz to 1 MHz) and the voltage (in the range of ± 4 V) using C–V and G/ω–V characteristics were obtained.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.