Impact of Ni and P substitution for B on the structure and soft magnetic properties of FeBPCuNb amorphous/nanocrystalline alloy

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-24 DOI:10.1007/s10854-024-14080-4

T. X. Huang, L. L. Lu, F. G. Chen, Aditya Jain, Y. G. Wang

{"title":"Impact of Ni and P substitution for B on the structure and soft magnetic properties of FeBPCuNb amorphous/nanocrystalline alloy","authors":"T. X. Huang, L. L. Lu, F. G. Chen, Aditya Jain, Y. G. Wang","doi":"10.1007/s10854-024-14080-4","DOIUrl":null,"url":null,"abstract":"<div>Alloying is usually an indispensable approach to optimize the magnetic performance of Fe-based amorphous/nanocrystalline alloys. This study focuses on tailoring the composition of the Fe81.5B10-xP7.5Cu0.5Nb0.5Mx (M=Ni & P, x = 0, 1, & 2 at. %) alloys by substituting the B element with Ni and P. The substitution of ferromagnetic element Ni enhances the saturation magnetic induction intensity and the incorporation of P improves the amorphous formation ability and reduces coercivity. Moreover, substituting B elements with Ni and P widens the optimal heat treatment range. Additionally, the study explores the soft magnetic properties and microstructure evolution as functions of the annealing temperature based on the DSC analysis. The results reveal that the P8.5 alloy exhibits fine grains (16.5 nm) and low coercivity (3.5 A/m) coupled with high saturation magnetic induction intensity (1.77 T) after annealing.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14080-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Alloying is usually an indispensable approach to optimize the magnetic performance of Fe-based amorphous/nanocrystalline alloys. This study focuses on tailoring the composition of the Fe_81.5B_10-xP_7.5Cu_0.5Nb_0.5M_x (M=Ni & P, x = 0, 1, & 2 at. %) alloys by substituting the B element with Ni and P. The substitution of ferromagnetic element Ni enhances the saturation magnetic induction intensity and the incorporation of P improves the amorphous formation ability and reduces coercivity. Moreover, substituting B elements with Ni and P widens the optimal heat treatment range. Additionally, the study explores the soft magnetic properties and microstructure evolution as functions of the annealing temperature based on the DSC analysis. The results reveal that the P8.5 alloy exhibits fine grains (16.5 nm) and low coercivity (3.5 A/m) coupled with high saturation magnetic induction intensity (1.77 T) after annealing.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.