Improved VOC in RbF-Treated Cu(In,Ga)Se2 Solar Cells via Passivation of Recombination Centers

IF 2.5 3区 工程技术 Q3 ENERGY & FUELS
Michael F. Miller;Alexandra M. Bothwell;Ana Kanevce;Stefan Paetel;Darius Kuciauskas;Aaron R. Arehart
{"title":"Improved VOC in RbF-Treated Cu(In,Ga)Se2 Solar Cells via Passivation of Recombination Centers","authors":"Michael F. Miller;Alexandra M. Bothwell;Ana Kanevce;Stefan Paetel;Darius Kuciauskas;Aaron R. Arehart","doi":"10.1109/JPHOTOV.2024.3483263","DOIUrl":null,"url":null,"abstract":"Cu(In,Ga)Se\n<sub>2</sub>\n (CIGS) solar cells have benefited in recent years from the addition of heavy alkali elements, such as Rb, which increase the solar cell open-circuit voltage (\n<italic>V</i>\n<sub>OC</sub>\n). To investigate the source of this improvement, here, we compare samples with and without Rb to perform a quantitative comparison of electronic defects and minority carrier lifetime. Deep-level transient and optical spectroscopy measurements were performed on two sets of rubidium fluoride (RbF)-treated and untreated CIGS, and three distinct traps were identified regardless of RbF treatment. The RbF treatment was found to reduce the concentration of the H2 trap, which was previously found to act as a recombination center and is located preferentially at CIGS grain boundaries. Time-resolved photoluminescence measurements showed an increase in effective lifetime after RbF and nearly all lifetime improvement resulted from reductions in bulk recombination. The observed \n<italic>V</i>\n<sub>OC</sub>\n improvement is well correlated with increased minority carrier lifetime and acceptor concentration, which led to increases and decreases in electron and hole quasi-Fermi levels, respectively.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"67-72"},"PeriodicalIF":2.5000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10737145/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
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Abstract

Cu(In,Ga)Se 2 (CIGS) solar cells have benefited in recent years from the addition of heavy alkali elements, such as Rb, which increase the solar cell open-circuit voltage ( V OC ). To investigate the source of this improvement, here, we compare samples with and without Rb to perform a quantitative comparison of electronic defects and minority carrier lifetime. Deep-level transient and optical spectroscopy measurements were performed on two sets of rubidium fluoride (RbF)-treated and untreated CIGS, and three distinct traps were identified regardless of RbF treatment. The RbF treatment was found to reduce the concentration of the H2 trap, which was previously found to act as a recombination center and is located preferentially at CIGS grain boundaries. Time-resolved photoluminescence measurements showed an increase in effective lifetime after RbF and nearly all lifetime improvement resulted from reductions in bulk recombination. The observed V OC improvement is well correlated with increased minority carrier lifetime and acceptor concentration, which led to increases and decreases in electron and hole quasi-Fermi levels, respectively.
复合中心钝化对rbf处理Cu(in,Ga)Se2太阳能电池VOC的改善
Cu(In,Ga)Se2 (CIGS)太阳能电池近年来受益于添加重碱元素,如Rb,它提高了太阳能电池的开路电压(VOC)。为了研究这种改进的来源,我们比较了含有和不含Rb的样品,对电子缺陷和少数载流子寿命进行了定量比较。对两组氟化铷(RbF)处理和未处理的CIGS进行了深能级瞬态光谱和光学光谱测量,无论RbF处理如何,都确定了三个不同的陷阱。RbF处理降低了H2捕集器的浓度,H2捕集器是先前发现的重组中心,优先位于CIGS晶界。时间分辨光致发光测量显示,RbF后有效寿命增加,几乎所有寿命的改善都是由于体积复合的减少。观察到的VOC改善与少数载流子寿命和受体浓度的增加密切相关,这分别导致电子和空穴准费米能级的增加和减少。
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来源期刊
IEEE Journal of Photovoltaics
IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
7.00
自引率
10.00%
发文量
206
期刊介绍: The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
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