Native Defect-Dependent Ultrafast Carrier Dynamics in p-Type Dopable Wide-Bandgap NiO

Abstract

NiO is a wide-bandgap p-type metal oxide that has extensive applications in optoelectronics and photocatalysts. Understanding the carrier dynamics in p-type NiO is pivotal for optimizing device performance, yet they remain largely unexplored. In this study, we employed femtosecond transient absorption spectroscopy to delve into the dynamics of photogenerated carriers in NiO films containing distinct prominent native defects: undoped NiO with oxygen vacancies (V_O) and O-rich NiO (denoted as NiO_1+δ) with nickel vacancies (V_Ni). Our findings unveil significant disparities between the two types of NiO thin films. The undoped NiO film exhibits a broad photoinduced absorption signal spanning the spectral range of 360–600 nm, whereas a photobleaching signal within the spectral range of 400–600 nm is observed in the O-rich NiO_1+δ film, which can be attributed to their unique native defects. We ascertain that the fast formation of small electron polarons (SEPs) occurs within a delay time of approximately 200 fs. Subsequently, the photogenerated carriers undergo rapid trapping by localized states (e.g., grain boundary states) in undoped NiO and O-rich NiO_1+δ within time scales of around 1–8 and 5–7 ps, respectively, followed by relatively slow trapping and recombination processes via native defects V_O and V_Ni within time scales of approximately 200 ps and ∼2 ns, respectively. These findings illuminate the fundamental processes governing carrier dynamics in NiO thin films with different native defects, offering crucial insights for the advancement of NiO-based devices.