Ho doping-induced ferroelectric polarization enhances UV photodetector performance of YbMnO3

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhang Shan, Song Xin, Gao Xing, Lu Chunxiao, Han Pei, Liu Yunying, Li Xiaowei, Zhang Junyan, Li Yong
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引用次数: 0

Abstract

The ferroelectric photovoltaic (PE-PV) effect has been extensively explored and plays a crucial role in constructing self-powered photodetectors. Ferroelectric materials have been attracting great interest in self-powered ultraviolet (UV) photodetectors due to their polarization-induced photovoltaic effect. In this paper, the ultraviolet self-powered photodetection properties of polycrystalline rare-earth Yb1-xHoxMnO3 (0 ≤ x ≤ 0.08, Δx = 0.02) ferroelectric materials have been investigated. The substitution of Ho atoms for Mn atoms has a great influence on the ferroelectric polarization, and Ho doping increases the photocurrent density. The photodetectors show excellent reproducibility responsivity (R) and detectivity (D*) under illumination at 365 nm. In addition, at the light density of 1 mW/cm2, the responsivity and detectivity of the photodetectors are as high as 0.09 W/A and 3.359 × 1011 Jones, respectively. These outstanding photodetection performances are due to the relatively high short-circuit current density (Jsc). High Jsc implies that more photogenerated carriers can be produced under illumination, which makes the device more sensitive to optical signals. This study presents a feasible method for improving the light-detection performance of the ultraviolet self-powered detector.

掺杂诱导的铁电极化增强了YbMnO3的紫外光电探测器性能
铁电光伏(PE-PV)效应在构建自供电光电探测器中起着至关重要的作用。铁电材料由于其极化诱导的光电效应而引起了自供电紫外探测器的极大兴趣。本文研究了多晶稀土Yb1-xHoxMnO3(0≤x≤0.08,Δx = 0.02)铁电材料的紫外自供电光探测性能。Ho原子取代Mn原子对铁电极化有很大影响,Ho掺杂增加了光电流密度。在365 nm的光照下,光电探测器表现出优异的再现性、响应性(R)和探测性(D*)。此外,在光密度为1 mW/cm2时,光电探测器的响应度和探测率分别高达0.09 W/A和3.359 × 1011 Jones。这些突出的光电检测性能是由于相对较高的短路电流密度(Jsc)。高Jsc意味着在光照下可以产生更多的光生载流子,这使得器件对光信号更加敏感。本研究为提高紫外自供电探测器的光探测性能提供了一种可行的方法。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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阿拉丁
MnN2O6?4H2O
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Yb(NO3)3?5H2O
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Ho(NO3)3?5H2O
阿拉丁
MnN2O6?4H2O
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Yb(NO3)3?5H2O
阿拉丁
Ho(NO3)3?5H2O
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