Ho doping-induced ferroelectric polarization enhances UV photodetector performance of YbMnO3

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-23 DOI:10.1007/s10854-024-14094-y

Zhang Shan, Song Xin, Gao Xing, Lu Chunxiao, Han Pei, Liu Yunying, Li Xiaowei, Zhang Junyan, Li Yong

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引用次数: 0

Abstract

The ferroelectric photovoltaic (PE-PV) effect has been extensively explored and plays a crucial role in constructing self-powered photodetectors. Ferroelectric materials have been attracting great interest in self-powered ultraviolet (UV) photodetectors due to their polarization-induced photovoltaic effect. In this paper, the ultraviolet self-powered photodetection properties of polycrystalline rare-earth Yb_1-xHo_xMnO₃ (0 ≤ x ≤ 0.08, Δx = 0.02) ferroelectric materials have been investigated. The substitution of Ho atoms for Mn atoms has a great influence on the ferroelectric polarization, and Ho doping increases the photocurrent density. The photodetectors show excellent reproducibility responsivity (R) and detectivity (D*) under illumination at 365 nm. In addition, at the light density of 1 mW/cm², the responsivity and detectivity of the photodetectors are as high as 0.09 W/A and 3.359 × 10¹¹ Jones, respectively. These outstanding photodetection performances are due to the relatively high short-circuit current density (J_sc). High J_sc implies that more photogenerated carriers can be produced under illumination, which makes the device more sensitive to optical signals. This study presents a feasible method for improving the light-detection performance of the ultraviolet self-powered detector.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.