Exploring the Conductive Dynamics of Sb2(S,Se)3-Based Memristors for Non-Volatile Memory and Neuromorphic Applications

IF 4.8 2区化学 Q2 CHEMISTRY, PHYSICAL

The Journal of Physical Chemistry Letters Pub Date : 2024-12-20 DOI:10.1021/acs.jpclett.4c03367

Yuanjie Yang, Yuanhui Yang, Lei Zheng, Yuchan Wang, Fang Wang, Xiaolei Li, Liangliang Feng, Hongling Guo, Shifu Xiong, Kailiang Zhang

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Abstract

Advancing the development of novel materials or architectures for random access memories, coupled with an in-depth understanding of their intrinsic conduction mechanisms, holds the potential to transcend the conventional von Neumann bottleneck. In this work, a novel memristor based on the Sb₂(S,Se)₃ material with an alloy of S and Se was fabricated. A systematic investigation of the correlation between the Se/(S + Se) ratio and memristive performance revealed that Ag/Sb₂(S,Se)₃/FTO memristive behavior is uniquely associated with the formation and disruption of anion vacancies and silver filaments. The resultant Ag/Sb₂(S,Se)₃/FTO memristor devices demonstrated good resistive switching, with durability surpassing 3 × 10⁴ cycles, showcasing multilevel conductivity states. Furthermore, these devices successfully emulated the synaptic functionality. This research has established the foundation for the intrinsic conduction mechanisms of antimony chalcogenide memristor artificial synapses.

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基于Sb2(S,Se)3的非易失性记忆和神经形态应用记忆电阻器的导电动力学研究

推进用于随机存取存储器的新型材料或结构的发展，再加上对其内在传导机制的深入了解，有可能超越传统的冯·诺依曼瓶颈。本文制备了一种基于Sb2(S,Se)3材料和S、Se合金的新型忆阻器。系统研究了Se/(S + Se)比与忆阻性能之间的关系，发现Ag/Sb2(S,Se)3/FTO忆阻行为与阴离子空位和银丝的形成和破坏密切相关。所制得的Ag/Sb2(S,Se)3/FTO忆阻器器件表现出良好的电阻开关性能，耐久性超过3 × 104次循环，表现出多层导电性状态。此外，这些装置成功地模拟了突触的功能。本研究为硫系锑忆阻器人工突触的内在传导机制奠定了基础。

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来源期刊

The Journal of Physical Chemistry Letters CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY

CiteScore

9.60

自引率

7.00%

发文量

1519

审稿时长

1.6 months

期刊介绍： The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.