Influence of ammonium fluoride concentration on the morphological, structural, optical and electrochemical properties of nanoporous WO3 films

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Farhat M. Ali Salem, Yam Fong Kwong, Mahayatun Dayana Johan Ooi, Mohamed Bououdina
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Abstract

This paper reports the synthesis and characterization of tungsten oxide by anodization method for 1 h using (1 M H2SO4, 1 M Na2SO4) electrolyte solution while varying NH4F concentration. The influence of NH4F concentration on structural, morphological, optical, and photocatalytic properties is examined. Scanning electron microscopy images show  the formation of a thin layer with porous nanostructure attributed to the dissolution of anodic oxide by H+ and F ions in the electrolyte under UV radiation of 365 nm. X-ray diffraction analysis  reveals a mixed-phase crystal system of WO3, consisting of both monoclinic and tetragonal phases The crystallite size is found  in the range 5.5‒18.2 nm with increasing NH4F concentration. UV–Vis spectroscopy analysis indicates a narrowing in the energy bandgap from 3.06 to 2.35 eV. Cyclic voltammetry manifests  a decrease in the anodic peak current density with the rise in the concentration rate of NH4F. These findings extend a better understanding of the influence of NH4F concentration on the structural and electrochemical characteristics of the anodized nanoporous WO3 film as a potential candidate for hydrogen generation by the water-splitting process.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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