Sonal Rattan, Anjali Leal, Sukhbir Singh, Suresh Kumar, J. K. Goswamy
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引用次数: 0
Abstract
In this research, we explored the hydrogen gas sensing properties of microwave-reduced graphene oxide (M-rGO) along with rGO-SnO₂ and rGO-ZnO nanohybrids. These nanohybrids were prepared through a microwave treatment process. Their structural and optical characteristics were analyzed using X-ray diffraction, field emission scanning electron microscopy, and UV-Visible spectroscopy, confirming the successful formation of graphene-metal oxide hybrid structures. The hydrogen gas detection performance of the rGO-SnO₂ and rGO-ZnO nanohybrids was evaluated by subjecting their thin-film sensing platforms to varying concentrations of hydrogen gas (from 50 ppm down to 0.1 ppm) at an operating temperature of 150 °C. The resistance-time behavior of the nanohybrids was monitored under both hydrogen exposure and normal conditions, with measurements taken using a Keithley 2461 source meter. Sensitivity measurements showed maximum values of 22.07%, 22.85%, and 79.39% for M-rGO, rGO-SnO₂, and rGO-ZnO platforms, respectively. These findings were supported by theoretical simulations based on density functional theory (DFT) performed with the Quantum ATK-Synopsis code (version 19.03). The study demonstrates the superior hydrogen sensing capability of the rGO-ZnO nanohybrid.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.