Optical bandgap tuning in SnO2–MoS2 nanocomposites: manipulating the mass of SnO2 and MoS2 using sonochemical solution mixing

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Chinkhai Ong, Weng Nam Lee, Yee Seng Tan, Patrik Ohberg, Yasuhiko Hayashi, Takeshi Nishikawa, Yuenkiat Yap
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引用次数: 0

Abstract

This study investigates controlled optical bandgap tuning through precise adjustment of the SnO2 and MoS2 mass in nanocomposites. A sonochemical solution mixing method, coupled with bath sonication, is employed for the preparation of SnO2–MoS2 nanocomposite. This approach allows for comprehensive characterization using UV–Vis FTIR, XRD, EDX, Raman spectroscopies, and FESEM, providing insights into morphology, chemical, and optical properties. Increasing the SnO2 mass leads to a linear decrease in the optical bandgap energy, from 3.0 to 1.7 eV. Similarly, increasing the MoS2 mass also results in a decrease in the optical bandgap energy, with a limitation of around 2.01 eV. This work demonstrates superior control over optical bandgap by manipulating the SnO2 mass compared to MoS2, highlighting the complexities introduced by MoS2 2D nanosheets during sonication. These findings hold significant value for optoelectronic applications, emphasizing enhanced control of optical bandgap through systematic mass manipulation.

二氧化锡-MoS2 纳米复合材料中的光带隙调节:利用声化学溶液混合法操纵二氧化锡和 MoS2 的质量
本研究通过精确调整纳米复合材料中SnO2和MoS2的质量来研究可控的光学带隙调谐。采用声化学溶液混合法制备了SnO2-MoS2纳米复合材料。该方法允许使用UV-Vis FTIR, XRD, EDX,拉曼光谱和FESEM进行综合表征,提供对形貌,化学和光学性质的见解。SnO2质量的增加导致光学带隙能量线性下降,从3.0 eV下降到1.7 eV。同样,增加MoS2质量也会导致光学带隙能量的下降,其限制在2.01 eV左右。与MoS2相比,这项工作证明了通过操纵SnO2质量来更好地控制光学带隙,突出了MoS2 2D纳米片在超声过程中引入的复杂性。这些发现对光电应用具有重要价值,强调通过系统的质量操纵来增强对光带隙的控制。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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