PZT-PMN-based high-power piezoelectric ceramics with co-large d33, Qm and Tc parameters

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shicheng Ding, Wenbin Tang, Xinghua Xu, Yiping Wang, Yong Huang, Guoliang Yuan
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引用次数: 0

Abstract

For high-power piezoelectric ceramics to operate stably under high alternating electric fields, they require co-high values of the piezoelectric coefficient (d33), mechanical quality factor (Qm), and Curie temperature (Tc). Here, 0.04Pb(Mn1/3Nb2/3)O3-0.96Pb(Zr0.505Ti0.495)O3-0.005Fe2O3-0.002Sc2O3 (ceramic 1)has a tetragonal phase near the piezoelectric morphotropic phase boundary, which significantly improved the Qm value of the ceramic while maintaining high d33 and Tc. It exhibits advantages in multi-parameter co-high values, with d33 = 340 pC/N, dielectric loss tanδ = 0.24%, Qm = 2200, electromechanical coupling coefficient (kp) = 0.59, permittivity (εr) = 1450 and Tc = 377 °C. The figure of merit (FOM = Qm × d33) value of ceramic 1 is as high as 748 nC/N at room temperature, surpassing most high-power piezoelectric ceramics. Under an alternating electric field of 40 V/mm at 92 kHz, the ceramic achieves a vibration velocity of 0.4 m/s, which is 3.6 times higher than that of commercial piezoelectric ceramic under the same electric field. These results indicate that the ceramic 1 is highly suitable for advanced high-power piezoelectric applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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