Effect of electrochemical conditions during the elaboration of CdS/ITO thin films

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2024-12-21 DOI:10.1007/s11082-024-07984-2

Abdelghani Khaldi, Mohamed Redha Khelladi, Nadir Bouarissa, Laurent Tabourot

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Abstract

In this study, the effect of potential and deposition times on the electrochemical, structural, morphological and optical properties of CdS films obtained by electrodeposition was investigated. The results obtained during the different characterizations carried out show that the films present different phases with the presence of the same CdS composition. Electrochemical characterization by cyclic voltammetry allowed us to determine the electrochemical range of the potential corresponding to the formation of CdS. X-ray diffraction analysis indicated that the CdS nanostructures has a polycrystalline nature and orthorhombic system and preferential orientation along the (420) plane. Surface morphological studies by (AFM and SEM) revealed the presence of nano-crystalline grains and all the deposited films have almost uniform grain size and well covered on the surface of the substrates. Composition analyses showed high stoichiometry, and the S/Cd atomic ratio is close to one. Optical studies showed that the average transmittance of the deposited films as a function of electrochemical parameters in the visible and near infrared regions is approximately (20–70)%, and the band gap ranged from (2.25 to 2.45) eV. The optical transmission of deposits varies randomly with increasing potential.

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CdS/ITO 薄膜制备过程中电化学条件的影响

本研究探讨了电位和沉积时间对通过电沉积获得的 CdS 薄膜的电化学、结构、形态和光学特性的影响。在不同的表征过程中获得的结果表明，在相同的 CdS 成分下，薄膜呈现出不同的相。通过循环伏安法进行电化学表征，我们确定了形成 CdS 的相应电位的电化学范围。X 射线衍射分析表明，CdS 纳米结构具有多晶性质和正方晶系，并沿 (420) 平面优先取向。通过原子力显微镜和扫描电子显微镜进行的表面形貌研究表明，存在纳米晶粒，所有沉积薄膜的晶粒大小几乎均匀一致，并很好地覆盖在基底表面。成分分析表明，硅/镉原子比接近于 1。光学研究表明，沉积薄膜在可见光和近红外区域的平均透射率与电化学参数的关系约为 (20-70)%，带隙范围为 (2.25 至 2.45) eV。沉积物的光学透射率随电势的增加而随机变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.