A −11.6-dBm OMA Sensitivity 0.55-pJ/bit 40-Gb/s Optical Receiver Designed Using a 2-Port-Parameter-Based Design Methodology

Yongxin Li;Tianyu Wang;Mostafa Gamal Ahmed;Ruhao Xia;Kyu-Sang Park;Mahmoud A. Khalil;Sashank Krishnamurthy;Zhe Xuan;Ganesh Balamurugan;Pavan Kumar Hanumolu
{"title":"A −11.6-dBm OMA Sensitivity 0.55-pJ/bit 40-Gb/s Optical Receiver Designed Using a 2-Port-Parameter-Based Design Methodology","authors":"Yongxin Li;Tianyu Wang;Mostafa Gamal Ahmed;Ruhao Xia;Kyu-Sang Park;Mahmoud A. Khalil;Sashank Krishnamurthy;Zhe Xuan;Ganesh Balamurugan;Pavan Kumar Hanumolu","doi":"10.1109/OJSSCS.2024.3510478","DOIUrl":null,"url":null,"abstract":"This article presents a systematic design methodology for transimpedance amplifiers (TIAs) based on two-port parameters, enabling efficient exploration of complex TIA architectures, including multistage forward amplifiers, and facilitating the identification of optimal design parameters to meet target specifications. Using this methodology, an analog front-end (AFE) with a low-noise, low-power, high-gain TIA was designed in a 22-nm FinFET process. Post-layout simulations show that the AFE achieves an input-referred noise current (INRC) of 0.78-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\n A rms, an averaged INRC density of 6.4 pA/\n<inline-formula> <tex-math>$\\sqrt {\\text {Hz}}$ </tex-math></inline-formula>\n, consumes 11.4 mW of power, and provides 87-dB\n<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>\n transimpedance gain with a 14.2-GHz bandwidth. The simulated TIA performance closely matches the results predicted by the design methodology, validating its accuracy and effectiveness. A prototype optical receiver featuring this AFE was fabricated in a 22-nm process and measured to achieve an OMA sensitivity of −11.6 dBm with an energy efficiency of 0.55 pJ/bit at a data rate of 40 Gb/s.","PeriodicalId":100633,"journal":{"name":"IEEE Open Journal of the Solid-State Circuits Society","volume":"4 ","pages":"328-339"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10772610","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of the Solid-State Circuits Society","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10772610/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This article presents a systematic design methodology for transimpedance amplifiers (TIAs) based on two-port parameters, enabling efficient exploration of complex TIA architectures, including multistage forward amplifiers, and facilitating the identification of optimal design parameters to meet target specifications. Using this methodology, an analog front-end (AFE) with a low-noise, low-power, high-gain TIA was designed in a 22-nm FinFET process. Post-layout simulations show that the AFE achieves an input-referred noise current (INRC) of 0.78- $\mu $ A rms, an averaged INRC density of 6.4 pA/ $\sqrt {\text {Hz}}$ , consumes 11.4 mW of power, and provides 87-dB $\Omega $ transimpedance gain with a 14.2-GHz bandwidth. The simulated TIA performance closely matches the results predicted by the design methodology, validating its accuracy and effectiveness. A prototype optical receiver featuring this AFE was fabricated in a 22-nm process and measured to achieve an OMA sensitivity of −11.6 dBm with an energy efficiency of 0.55 pJ/bit at a data rate of 40 Gb/s.
本文介绍了一种基于双端口参数的互阻抗放大器 (TIA) 系统设计方法,可有效探索复杂的 TIA 架构(包括多级前向放大器),并有助于确定最佳设计参数以满足目标规格。利用这种方法,在 22 纳米 FinFET 工艺中设计出了具有低噪声、低功耗、高增益 TIA 的模拟前端 (AFE)。布局后仿真显示,AFE 实现了 0.78- $\mu $ A rms 的输入参考噪声电流 (INRC),平均 INRC 密度为 6.4 pA/ $\sqrt {\text {Hz}}$,功耗为 11.4 mW,并在 14.2 GHz 带宽下提供了 87-dB $\Omega $ 跨阻抗增益。模拟的 TIA 性能与设计方法预测的结果非常吻合,验证了设计方法的准确性和有效性。采用 22 纳米工艺制作了具有这种 AFE 的光接收器原型,经测量,在数据速率为 40 Gb/s 时,OMA 灵敏度为 -11.6 dBm,能效为 0.55 pJ/bit。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信