A 226.875-Gbit/s/λ Optical Receiver Based on a High-Frequency Integration by Flip-Chip Mounting

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2024-11-27 DOI:10.1109/LPT.2024.3508539

Shohei Kosuga;Shigeru Kanazawa;Toshihide Yoshimatsu;Yasuhiko Nakanishi;Takuya Kanai;Takahiro Nakamura;Shoko Tatsumi;Mingchen Chen;Hirotaka Nakamura

{"title":"A 226.875-Gbit/s/λ Optical Receiver Based on a High-Frequency Integration by Flip-Chip Mounting","authors":"Shohei Kosuga;Shigeru Kanazawa;Toshihide Yoshimatsu;Yasuhiko Nakanishi;Takuya Kanai;Takahiro Nakamura;Shoko Tatsumi;Mingchen Chen;Hirotaka Nakamura","doi":"10.1109/LPT.2024.3508539","DOIUrl":null,"url":null,"abstract":"A high-speed optical receiver for IM-DD 226.875-Gbit/s/\n<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula>\n transmission was designed and fabricated by using high-frequency, integrated flip-chip (FC) mounting. Thanks to the developed FC-mounting technique, the optical receiver exhibited high 3-dB bandwidth and less-fluctuation optical-to-electrical (O/E) frequency response. The fabricated optical receiver demonstrated 3-dB bandwidth of 55.1 GHz with less-fluctuation O/E frequency response up to 50 GHz (i.e., Nyquist frequency under 100-Gbaud operation at 4-PAM modulation frequency). The simulated transmission performance of the optical receiver reveals that its link budget for 226.875-Gbit/s/\n<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula>\n transmission is expanded by 3.7 dB by using the developed FC-mounting technique. The fabricated optical receiver also experimentally demonstrated transmission of a 226.875-Gbit/s signal over 20-km SSMF.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 1","pages":"57-60"},"PeriodicalIF":2.3000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10770254/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A high-speed optical receiver for IM-DD 226.875-Gbit/s/

$\lambda $

transmission was designed and fabricated by using high-frequency, integrated flip-chip (FC) mounting. Thanks to the developed FC-mounting technique, the optical receiver exhibited high 3-dB bandwidth and less-fluctuation optical-to-electrical (O/E) frequency response. The fabricated optical receiver demonstrated 3-dB bandwidth of 55.1 GHz with less-fluctuation O/E frequency response up to 50 GHz (i.e., Nyquist frequency under 100-Gbaud operation at 4-PAM modulation frequency). The simulated transmission performance of the optical receiver reveals that its link budget for 226.875-Gbit/s/

$\lambda $

transmission is expanded by 3.7 dB by using the developed FC-mounting technique. The fabricated optical receiver also experimentally demonstrated transmission of a 226.875-Gbit/s signal over 20-km SSMF.

查看原文本刊更多论文

226.875 gbit /s/λ高频集成倒装光接收机

采用高频集成倒装芯片（FC）封装，设计并制作了用于IM-DD 226.875 gbit /s/ $\lambda $传输的高速光接收机。由于开发的fc安装技术，光接收器具有高3db带宽和较小波动的光电（O/E）频率响应。所制备的光接收机具有55.1 GHz的3db带宽，O/E频率响应波动较小，高达50 GHz（即在4-PAM调制频率下100-Gbaud下的Nyquist频率）。模拟光接收机的传输性能表明，采用所开发的fc封装技术，其226.875 gbit /s/ $\lambda $传输的链路预算增加了3.7 dB。实验还证明了该光接收机在20 km SSMF上传输226.875 gbit /s的信号。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.