Development of high-performance MoS2 with nanofoam architecture for gaseous elemental mercury sequestration: The key role of edge sulfur vacancy

IF 13.3 1区 工程技术 Q1 ENGINEERING, CHEMICAL
Yixuan Liu, Licong Guan, Yuxin Tu, Zesheng Ruan, Jiahuang Chen, Zhifeng Xu, Ruixiang Wang, Hui Liu, Zhilou Liu
{"title":"Development of high-performance MoS2 with nanofoam architecture for gaseous elemental mercury sequestration: The key role of edge sulfur vacancy","authors":"Yixuan Liu, Licong Guan, Yuxin Tu, Zesheng Ruan, Jiahuang Chen, Zhifeng Xu, Ruixiang Wang, Hui Liu, Zhilou Liu","doi":"10.1016/j.cej.2024.158786","DOIUrl":null,"url":null,"abstract":"Two-dimensional MoS<sub>2</sub> materials exhibit considerable promise for elemental mercury adsorption. However, challenges persist to identify the intrinsic active site in MoS<sub>2</sub> adsorbent for Hg<sup>0</sup> immobilization. In this work, three MoS<sub>2</sub> samples with different sulfur vacancy concentrations and sulfur vacancy species, namely few-layer MoS<sub>2</sub>, multi-layer MoS<sub>2</sub>, and edge-rich MoS<sub>2</sub>, were engineered to confirm the pivotal active ligand for Hg<sup>0</sup> capture performance. Theoretical calculation combined with multiple characterizations confirm the critical role of edge sulfur vacancy for Hg<sup>0</sup> sequestration. MoS<sub>2</sub> with rich edge sulfur vacancies demonstrates commendable Hg<sup>0</sup> adsorption performance at elevated temperatures, achieving an average adsorption rate of 7.07 μg/g/min, higher than few-layer MoS<sub>2</sub> with rich in-plane sulfur vacancies. The Hg<sup>0</sup> adsorption capacity of edge-rich MoS<sub>2</sub> achieves 27.62 mg/g at a breakthrough threshold of 25 %, surpassing the capabilities of most reported metal sulfide adsorbents. Moreover, Hg<sup>0</sup> is peculiarly prone to combine with unsaturated Mo ligand on the edge sulfur vacancy to form Hg-Mo amalgam, then reacts with neighboring sulfide ligand to form stable HgS. Besides, high thermal stability of active sulfide ligand on the edge sulfur vacancy endows the edge-rich MoS<sub>2</sub> with a wide temperature range. This research offers a new insight on the rational adsorbent design of metal sulfides for mercury pollution control.","PeriodicalId":270,"journal":{"name":"Chemical Engineering Journal","volume":"20 1","pages":""},"PeriodicalIF":13.3000,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Engineering Journal","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1016/j.cej.2024.158786","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Two-dimensional MoS2 materials exhibit considerable promise for elemental mercury adsorption. However, challenges persist to identify the intrinsic active site in MoS2 adsorbent for Hg0 immobilization. In this work, three MoS2 samples with different sulfur vacancy concentrations and sulfur vacancy species, namely few-layer MoS2, multi-layer MoS2, and edge-rich MoS2, were engineered to confirm the pivotal active ligand for Hg0 capture performance. Theoretical calculation combined with multiple characterizations confirm the critical role of edge sulfur vacancy for Hg0 sequestration. MoS2 with rich edge sulfur vacancies demonstrates commendable Hg0 adsorption performance at elevated temperatures, achieving an average adsorption rate of 7.07 μg/g/min, higher than few-layer MoS2 with rich in-plane sulfur vacancies. The Hg0 adsorption capacity of edge-rich MoS2 achieves 27.62 mg/g at a breakthrough threshold of 25 %, surpassing the capabilities of most reported metal sulfide adsorbents. Moreover, Hg0 is peculiarly prone to combine with unsaturated Mo ligand on the edge sulfur vacancy to form Hg-Mo amalgam, then reacts with neighboring sulfide ligand to form stable HgS. Besides, high thermal stability of active sulfide ligand on the edge sulfur vacancy endows the edge-rich MoS2 with a wide temperature range. This research offers a new insight on the rational adsorbent design of metal sulfides for mercury pollution control.
具有纳米泡沫结构的高效二硫化钼的开发:边缘硫空位的关键作用
二维二硫化钼材料对单质汞的吸附表现出相当大的前景。然而,确定二硫化钼吸附剂中用于固定Hg0的固有活性位点仍然存在挑战。在这项工作中,设计了三种不同硫空位浓度和硫空位种类的MoS2样品,即少层MoS2,多层MoS2和富边MoS2,以确定Hg0捕获性能的关键活性配体。理论计算结合多种表征证实了边硫空位对Hg0固存的关键作用。具有丰富边缘硫空位的二硫化钼在高温下具有良好的吸附性能,平均吸附速率为7.07 μg/g/min,高于具有丰富平面硫空位的少层二硫化钼。富边MoS2对Hg0的吸附容量达到27.62 mg/g,突破阈值为25 %,超过了大多数报道的金属硫化物吸附剂的吸附能力。此外,Hg0特别容易在边缘的硫空位上与不饱和的Mo配体结合形成Hg-Mo银汞合金,然后与邻近的硫化物配体反应形成稳定的HgS。此外,活性硫化物配体在边缘硫空位上的高热稳定性使富边二硫化钼具有较宽的温度范围。本研究为合理设计金属硫化物吸附剂防治汞污染提供了新的思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Chemical Engineering Journal
Chemical Engineering Journal 工程技术-工程:化工
CiteScore
21.70
自引率
9.30%
发文量
6781
审稿时长
2.4 months
期刊介绍: The Chemical Engineering Journal is an international research journal that invites contributions of original and novel fundamental research. It aims to provide an international platform for presenting original fundamental research, interpretative reviews, and discussions on new developments in chemical engineering. The journal welcomes papers that describe novel theory and its practical application, as well as those that demonstrate the transfer of techniques from other disciplines. It also welcomes reports on carefully conducted experimental work that is soundly interpreted. The main focus of the journal is on original and rigorous research results that have broad significance. The Catalysis section within the Chemical Engineering Journal focuses specifically on Experimental and Theoretical studies in the fields of heterogeneous catalysis, molecular catalysis, and biocatalysis. These studies have industrial impact on various sectors such as chemicals, energy, materials, foods, healthcare, and environmental protection.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信