BEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures

IF 9.6 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Yiyuan Sun, Ying Xu, Zijie Zheng, Yuxuan Wang, Yuye Kang, Kaizhen Han, Wei Shi, Jinyong Wang, Xiao Gong
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引用次数: 0

Abstract

Targeting high-performance computing at cryogenic temperatures, we report back-end-of-line (BEOL)-compatible p-type Te-TeOx field effect transistors (FETs) deposited using a sputtering method that is cost-effective, large-scale manufacturable, and highly controllable. Combined with the indium tin oxide channel n-FETs employing a common gate and HfO2 gate dielectric, BEOL three-dimensional stackable oxide semiconductor complementary metal oxide semiconductor (CMOS) inverters were further realized, demonstrating excellent threshold voltage matching, with a high voltage gain of 132 with a 2 V supply voltage (VDD) at room temperature. At cryogenic temperatures, the CMOS inverter exhibits significantly enhanced performance, achieving a voltage gain of 233 at a VDD of 2 V with a wide noise margin of 86%. Even at an ultralow VDD of 0.5 V, the CMOS inverter maintains solid performance with an exceptionally low power consumption of <60 pW.

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来源期刊
Nano Letters
Nano Letters 工程技术-材料科学:综合
CiteScore
16.80
自引率
2.80%
发文量
1182
审稿时长
1.4 months
期刊介绍: Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.
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