Mesh-patterned IZO/Hf-doped IGZO thin film transistors with high mobility and mechanical stability for flexible display

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Kang Min Lee, Nahyun Kim, Jin Kyung Lee, Ho Jin Lee, Su Yun Kim, Tae Geun Kim
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引用次数: 0

Abstract

Despite recent improvements in oxide-based thin-film transistors (TFTs), their performance (i.e., mobility and on/off ratio) must be further enhanced and the fabrication temperature must be decreased to enable the practical use of TFTs in flexible applications. Herein, we introduce mesh-patterned indium-zinc oxide (mIZO)/Hf-doped indium-gallium-zinc oxide (Hf:IGZO) heterojunction TFTs that exhibit superior electrical performance and flexibility without requiring high-temperature annealing during fabrication. Hf, readily bonded to the surrounding ion vacancies, is used in the IGZO channel, thereby decreasing the process temperature. Moreover, a mesh pattern is applied to the channel area, which expands the quasi-two-dimensional electron gas region and increases the number of electrons. Additionally, the mesh pattern reduces the stress experienced by the channel layer, providing superior flexibility with respect to those of planar structures. The proposed mIZO/Hf:IGZO heterojunction TFT exhibits remarkably high mobility (∼40 cm2/Vs) and on/off ratio (∼108) under a low process temperature (150 °C). Furthermore, an organic light-emitting diode driven by the mIZO/Hf:IGZO heterojunction TFT continued operating even after 1000 bending cycles, confirming the superior flexibility of the proposed TFT. This study presents a novel method to achieve superior performance and mechanical flexibility from oxide-based TFTs without high-temperature processes.

Abstract Image

Abstract Image

用于柔性显示的高迁移率和机械稳定性的网格图IZO/ hf掺杂IGZO薄膜晶体管
尽管氧化物基薄膜晶体管(TFTs)最近有所改进,但它们的性能(即迁移率和开/关比)必须进一步提高,制造温度必须降低,才能使TFTs在灵活应用中的实际应用。在此,我们引入了网状铟-氧化锌(mIZO)/Hf掺杂铟-镓-氧化锌(Hf:IGZO)异质结tft,该tft在制造过程中无需高温退火就具有优异的电性能和灵活性。易于与周围离子空位结合的Hf被用于IGZO通道中,从而降低了工艺温度。此外,在通道区域上施加网格图案,扩大了准二维电子气区,增加了电子数。此外,网状图案减少了通道层所经历的应力,相对于平面结构提供了优越的灵活性。所提出的mIZO/Hf:IGZO异质结TFT在低工艺温度(150 °C)下具有非常高的迁移率(~ 40 cm2/Vs)和开/关比(~ 108)。此外,由mIZO/Hf:IGZO异质结TFT驱动的有机发光二极管即使在1000次弯曲循环后仍能继续工作,证实了所提出的TFT的优越灵活性。本研究提出了一种无需高温处理就能获得优异性能和机械柔韧性的新方法。
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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