{"title":"Capillary Force-Assisted CsPbBr3–xIx (x = 0, 1) Columnar Crystal Film for X-ray Detectors with Ultrahigh Electric Field and Sensitivity","authors":"Sixin Chen, Meng Xu, Zhaolin Song, Yiran Shi, Ruichen Bai, Wanqi Jie, Menghua Zhu","doi":"10.1021/acsami.4c18212","DOIUrl":null,"url":null,"abstract":"Inorganic halide perovskite thin-film X-ray detectors have attracted great research interest in recent years due to their high sensitivity, low detection limit, and facile fabrication process. The poor crystal quality of the thin film with uncontrollable thickness and low background voltage during detection limits its practical application. Here, a high-quality CsPbBr<sub>3–<i>x</i></sub>I<sub><i>x</i></sub> (<i>x</i> = 0, 1) columnar crystal film is prepared by an improved melt-confined method with a porous anodic aluminum oxide (AAO) template, which stabilizes the disorder perovskite systems of CsPbBr<sub>2</sub>I by stress. The AAO-CsPbBr<sub>3–<i>x</i></sub>I<sub><i>x</i></sub> (<i>x</i> = 0) detectors exhibit high detection accuracy and photoelectric conversion capability with an ultrahigh sensitivity of 32,399.5 μC·Gy<sub>air</sub><sup>–1</sup>·cm<sup>–2</sup> at 2142.9 V mm<sup>–1</sup> under 20 kV<sub>p</sub> X-rays and 19,217.4 μC·Gy<sub>air</sub><sup>–1</sup>·cm<sup>–2</sup> with a higher background electric field of 6666.7 V mm<sup>–1</sup> for AAO-CsPbBr<sub>3–<i>x</i></sub>I<sub><i>x</i></sub> (<i>x</i> = 1). Moreover, the AAO-CsPbBr<sub>3–<i>x</i></sub>I<sub><i>x</i></sub> (<i>x</i> = 1) film detector acquires a lower detection limit of 7.65 nGy·s<sup>–1</sup> and a higher X-ray imaging spatial resolution of 1.6 LP/mm and 8.6 nGy·s<sup>–1</sup> and 1.4 LP/mm for AAO-CsPbBr<sub>3–<i>x</i></sub>I<sub>x</sub> (<i>x</i> = 0). The facile, high-quality columnar crystal film devices display great potential for low-energy and low-dose X-ray imaging in flat panel detection applications.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"82 1","pages":""},"PeriodicalIF":8.3000,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c18212","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Inorganic halide perovskite thin-film X-ray detectors have attracted great research interest in recent years due to their high sensitivity, low detection limit, and facile fabrication process. The poor crystal quality of the thin film with uncontrollable thickness and low background voltage during detection limits its practical application. Here, a high-quality CsPbBr3–xIx (x = 0, 1) columnar crystal film is prepared by an improved melt-confined method with a porous anodic aluminum oxide (AAO) template, which stabilizes the disorder perovskite systems of CsPbBr2I by stress. The AAO-CsPbBr3–xIx (x = 0) detectors exhibit high detection accuracy and photoelectric conversion capability with an ultrahigh sensitivity of 32,399.5 μC·Gyair–1·cm–2 at 2142.9 V mm–1 under 20 kVp X-rays and 19,217.4 μC·Gyair–1·cm–2 with a higher background electric field of 6666.7 V mm–1 for AAO-CsPbBr3–xIx (x = 1). Moreover, the AAO-CsPbBr3–xIx (x = 1) film detector acquires a lower detection limit of 7.65 nGy·s–1 and a higher X-ray imaging spatial resolution of 1.6 LP/mm and 8.6 nGy·s–1 and 1.4 LP/mm for AAO-CsPbBr3–xIx (x = 0). The facile, high-quality columnar crystal film devices display great potential for low-energy and low-dose X-ray imaging in flat panel detection applications.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.